Simulation Analysis And Model Optimization Of Electron Transport Distribution In EBAPS Based On Statistical Simulation Method

Due to the rising demand for night vision technology in military,industry,transportation and other fields,micro-optical night vision technology has gained high speed development in recent years.Due to the rising demand for digital micro-optical devices in recent years,ICCD,EMCCD,EBAPS and other micro-optical night vision devices have emerged in the development of micro-optical night vision technology,among which,EBAPS devices as vacuum-solid hybrid micro-optical devices inherit the advantages of high sensitivity and fast response time of photocathode sensing in traditional vacuum devices,while using electron bombardment of semiconductors to obtain high gain.The obtained electron bombardment semiconductor gain has the advantage of low noise,so once introduced it has gained wide attention from all walks of life at home and abroad.In EBAPS,photoelectrons are generated by photoelectric cathode with light excitation,and are accelerated and focused through the dead layer into the semiconductor through the near-focus electric field,and generate multiplying electrons by colliding with atoms in the semiconductor,thus obtaining electron bombardment semiconductor gain,and the multiplying electrons are finally collected at the N-well and finally imaged.In this paper,the electron transport process in EBAPS is simulated to obtain the distribution of electrons in EBAPS,and three parts are simulated: the near-focusing electric field due to different doping methods,the energy loss when electrons pass through the passivation layer,and the effect of different doping methods on the electron collection efficiency.In the near-focus electric field part,the acceleration process of electrons and the final distribution of electrons bombarded on the surface layer of semiconductor are obtained by simulating the distribution of near-focus electric field under different doping methods.The simulation results show that the redoping of the upper layer of the electron multiplication layer can obtain a parallel near-focusing electric field,which is conducive to the acceleration and focusing of electrons in the vacuum part;In the process of electrons passing through the passivation layer,the scattering trajectory and energy loss rate of electrons passing through the passivation layer are simulated and calculated by combining statistical simulation method,and the residual energy of electrons under different conditions is obtained by changing the acceleration voltage and thickness of the passivation layer,and the energy loss of electrons is minimized by thinning the passivation layer and increasing the acceleration voltage;For the electron multiplication layer part,different doping methods are used to simulate different electric field distributions,so as to obtain different electron collection efficiencies.On the premise of the structure obtained in the first part,which can ensure the near-focus electric field parallel,the different scattering processes of electrons in the electron multiplication layer are simulated using statistical simulation method to obtain the distribution of electrons in the electron multiplication layer,and finally to realize the study of the effect of different doping methods of electron multiplication layer on the electron collection efficiency.Combined with the above studies,the finally obtained EBAPS model can realize the acceleration and focusing of electrons in the vacuum near-adhesive focusing structure,and the electron collection efficiency of electrons falling in the pixel region can be improved in the electron multiplication layer,and this model can provide reference value for the fabrication of high-performance EBAPS devices.