Design Of Microwave MMIC Frequency Multiplier And Power Amplifier

With the rapid development of wireless communication systems,there is an increasing demand for miniaturization and low power consumption in microwave circuit design.Microwave Monolithic Integrated Circuit(MMIC)has been widely used in civilian communication,electronic warfare,millimeter-wave radar,and other fields due to its advantages of high integration,low power consumption,high operating frequency,high reliability,and low cost.Frequency multipliers and power amplifiers are key components in microwave millimeter-wave communication systems.This thesis investigates the domestic and international research status of millimeter-wave frequency multipliers and broadband power amplifiers.In response to the demand for frequency multipliers and power amplifiers in modern microwave millimeter-wave communication systems,a W-band millimeter-wave octuple frequency chip and an X-Ku band broadband high-power amplifier chip are designed(1)A W-band millimeter-wave octuple frequency multiplier chip is designed based on the100 nm Ga As p HEMT process.In order to address the issue of low harmonic suppression and output power of single-end frequency multiplier,a matching network based on harmonic trap is used to improve the harmonic suppression of single-end frequency multiplier.By optimizing the frequency multiplier structure and cascade driver amplifier,the conversion gain and output power of octapler are improved,and a compact millimeter wave octapler chip with high harmonic suppression and high output power is finally realized.In the frequency range of 102.4-112 GHz,the output power of the frequency multiplier is greater than 13.5 d Bm,with a maximum power of15.2 d Bm,and the harmonic suppression is better than 42 d Bc for all harmonic components.The in-band conversion gain is greater than 13.5 d B.The entire octuple frequency multiplier chip has an area of 2.0×1.5 mm~2and a power consumption of 646 m W.(2)An X-Ku band broadband high-power amplifier chip is designed based on the 250 nm Ga N HEMT process.The power amplifier adopts a three-stage reactive matching structure,and the final stage uses a low-loss power synthesis network to realize eight-way power synthesis and output matching.To address the issue of gain inconsistency caused by transistor gain roll-off,compensation is made through negative slope inter-stage matching loss,and lower input standing wave ratio is achieved through lossy matching.Finally,a broadband high-power amplifier chip with super-wide bandwidth is realized.In the frequency range of 10-18 GHz,the saturation output power of the power amplifier is greater than 44.2 d Bm,with a maximum power of 45.3 d Bm,and the power-added efficiency is more than 26%.The saturated gain is greater than 19.7 d B.The average power consumption of the whole chip is 94.5 W,and the total chip area is 3.9×3.6 mm~2。...