Theoretical And Application Research On A Novel Vertical Mosfet Structure Concerning Its Static Characteristics For Advanced IC

As the size of transistors continues to shrink,the development of Moore’s Law has reached its limit.The existing FinFET structure is no longer suitable for the design and manufacture of large-scale digital integrated circuits at 3nm node or beyond.It will be replaced by GAA at the 3nm node.However,according to the prediction of the International Roadmap Organization,starting from the 1.5nm node,the channel length of the GAA structure will remain 9.6nm above,which means that scaling is no longer able to further improve the integration of circuits.In addition,due to various sources of statistical fluctuations,random device-to-device fluctuations also have an increasing impact on the reliability of large-scale integrated circuits.In order to further improve the integration of the chip and break through the limit of the current Moore’s Law,our research group proposed a new type of vertical structure Nano-Wall Field Effect Transistor(NWaFET),which uses a device different from FinFET and GAA.The method for suppressing the short channel effect enables the channel length of the device to be further reduced on the existing basis.In this thesis,by studying the statistical distribution of the static characteristics of the NWaFET structure under the influence of various statistical fluctuation sources,the static characteristics and reliability of the structure under the extremely small size are discussed.Through theoretical analysis,this thesis discusses the device parameters that will affect the random deviation of the threshold voltage of NWaFET structure,and analyzes the influence of random doping fluctuation effect RDF and metal work function fluctuation effect WFV on NWaFET,thus providing a basis for simulation work.Theoretical basis.With the help of the Sano method and IFM method of the Sentaurus TCAD simulation software,this thesis conducts simulation research on the random doping fluctuation effect and the metal work function fluctuation effect,and summarizes and analyzes the optimization method of the statistical characteristics of its static parameters.The analysis basis is mainly extracted from NWaFET The standard deviation and normalized standard deviation of the statistical distribution curves of various electrical parameters.On this basis,this thesis studies the influence of the line edge roughness LER effect on the statistical fluctuation characteristics of NWaFET through the joint simulation of Matlab and TCAD.Through the comprehensive simulation of the above three statistical fluctuation sources,the correlation between LER effect,RDF effect and WFV effect is studied,and the overall statistical fluctuation characteristics of NWaFET are comprehensively investigated.Through the comprehensive simulation of FinFET,GAA and NWaFET structures with a channel length of 10 nm,this thesis extracts the standard deviation of the statistical distribution curves of the electrical parameters of the three structures and the correlation data between the statistical fluctuation sources,and analyzes the three structures.The overall statistical fluctuation characteristics are compared.The data show that under the same line-edge rough curve power spectral density parameters,the correlation between the LER effect in the NWaFET structure and the other two statistical fluctuation sources is smaller than that of the FinFET and GAA structures,and its overall statistical fluctuation characteristics are better than those in the FinFET and GAA structures.FinFET and GAA structure.At the same time,the extracted statistical average data of various electrical parameters show that the static characteristics of FinFET and GAA structures will deteriorate significantly when the channel length is10 nm or less.This means that the NWaFET structure will have better static characteristics and statistical distribution characteristics in subsequent process nodes.