Broadband Low Noise Amplifier Integrated Circuit Design

With the development of informatization,people put forward higher requirements for information transmission,so the broadband technology for faster and better information transmission has attracted people’s attention.The gain,input-output matching,and lin-earity of wideband low-noise amplifiers largely affect the performance of radio frequency receivers,and the design of wideband low-noise amplifiers with excellent performance has become one of the research hotspots.This thesis mainly studies the broadband low noise amplifier,introduces the relevant theoretical knowledge of the low noise amplifier,briefly analyzes the reasons for the bandwidth limitation of transistors,and analyzes and compares the commonly used broadband low noise amplifier structures and broadband technology.On this basis,the wideband low noise amplifier integrated circuit is designed.Because the gate transmission line of the traditional distributed low-noise amplifier is terminated with a 50Ωresistor,the low-frequency noise figure is relatively high.Based on the 0.15μm Ga As p HEMT process,this thesis proposes different broadband low-noise amplifier structures to reduce the low-frequency noise of the distributed low-noise amplifier.（1）A distributed low-noise amplifier based on diode feedback is designed.By adding diode feedback to increase the gate resistance of the common-source transistor,the low-frequency noise figure in the distributed low-noise amplifier is reduced.The layout sim-ulation results show that in the broadband frequency range of 500 MHz-26.5 GHz,the reflection coefficients S₁₁and S₂₂of the input and output ports are less than-10 dB?the gain is 12.5-15 dB?the noise figure is in Between 1.2-3 dB,reduce the low-frequency noise in the distributed low-noise amplifier structure?the output P1dB is-0.2-8.8 dBm.（2）Combining the noise cancellation structure with the distributed low noise ampli-fier structure to achieve broadband matching and noise cancellation.Self-bias structures are formed by using diodes and resistors or resistor dividers respectively,and self-bias noise-reduction distributed low-noise amplifiers combined with a noise-cancelling struc-ture are designed.The layout simulation shows that the reflection coefficients S₁₁and S₂₂of the input and output ports are both less than-10 dB?the noise-reducing distributed low-noise amplifier based on diode and resistor voltage division is in the frequency range of 500 MHz-26.5 GHz,the gain is 14.9-16.8 dB,the noise figure is between 1.1-1.8 dB,and the output P1dB is 9.9-14.6 dBm?the noise-reducing distributed low-noise amplifier based on resistor division is in the frequency range of 300 MHz-26.5 GHz,and the gain is15.3-17 dB,the noise figure is between 1.1-1.9 dB,and the output P1dB is 10.7-15 dBm.