| Terahertz technology has broad application prospects,such as safety detection,wireless communication,medical imaging,atmospheric monitoring and other fields.However,in order to flourish terahertz technology,it is necessary to solve a critical problem-the problem of terahertz sources,and then to achieve stable high-frequency,high-power sources.In response to this problem,scholars from various countries have carried out research.Among them,terahertz frequency multipliers based on planar Schottky diodes have been widely recognized by researchers because of their good performance,low cost and mature technology,and have become an important way to obtain terahertz waves.In this thesis,research is conducted on terahertz frequency triplers.Two types of frequency triplers are designed using terahertz hybrid integration technology and terahertz monolithic integration technology,and they are analyzed,processed,and tested.The main research contents of this thesis are as follows:(1)The core semiconductor device of terahertz frequency multiplier-Schottky diode is studied in depth.Firstly,the circuit scheme,working principle and circuit model are analyzed in detail.Then,aiming at the problem that the conventional SPICE model cannot accurately characterize the parasitic parameters,an accurate three-dimensional electromagnetic model is established for joint simulation.In response to the long-standing problem of Schottky diodes being restricted by foreign technologies,this thesis conducts research on frequency multipliers using domestically produced Schottky diodes as well as Schottky diodes jointly developed with the 13 th Institute’s domestic technology.The purpose is to accumulate experience for the localization of terahertz technology.(2)A terahertz frequency tripler based on domestic Schottky diodes was designed using a hybrid integrated process.The tripler was processed and tested experimentally,and the test results showed that when the input power is 100 m W and the frequency range is 285-322 GHz,the output power is greater than 0.5m W and there is a maximum output power of 4.8m W at 310 GHz,with a frequency conversion efficiency between 0.5% and4.8%.The simulation results generally agree with the measured results,verifying the reliability of the simulation method and the accuracy of diode modeling.However,due to diode consistency and assembly issues,some performance degradation and errors have been caused.Overall,the frequency multiplier has initially met design expectations and can be applied to other terahertz systems.(3)A diamond monolithic integrated 0.3 THz tripler based on planar Schottky diode is designed by using monolithic integrated process and half-part and half-whole design method.The purpose is to verify the power carrying capacity of diamond substrate and its feasibility in domestic terahertz monolithic circuit,so as to provide a case for the application of domestic diamond substrate in terahertz monolithic integrated circuit,and provide some references for the research of diamond monolithic integrated technology. |