Design Of The CMOS Clock Generator And Transmitter In Millimeter-Wave Ranges

With the development of the radio technology,frequency resources of conventional bands trend to be saturated.To solve this problem,people are looking forward to develop resources of higher frequency bands,which is Bands in millimeter wave ranges.Bands in millimeter wave ranges provide higher bandwidth,which means higher data rate,meanwhile the high frequency has more antenna gain and smaller beamwidth.Despite these advantages,circuits working in millime-ter waves still face great challenges:they require higher power consumption and more expensive technology which means higher costs.Circuits working in millimeter waves are therefore eager to improve their costs and power consumption.Focusing on the urgent needs for low costs and low power,researches on millimeter wave clock generator and transmitter are carried out in various aspects,including theoretical analysis,actual circuits design and optimization,custom lumped ele-ments design and optimization and layout optimization.Several millimeter clock generator circuits and a transmitter circuit are introduced in low cost CMOS technology,which provide references for future low cost and low power millimeter wave circuits design.Chapter 1 introduces the background and the trend of the millimeter wave ranges.Chap-ter 2 discusses the difference between CMOS and other RF technology meanwhile analyzes the characteristics of the low cost CMOS technology used in this dissertation.Custom capacitors and inductors designs based on these characteristics are also presented.Chapter 3 presents a K-band complementary-cross-coupled voltaged-controlled-oscillator.Ex-periment results show the oscillator has a working frequency range of 21.98-23.42GHz and a core power consumption of 3.14mW with a working voltage of 1.2 V.The chip area is 0.253mm2(excluding ESD protecting pad).Compared with similar node technology,this oscillator has lower core power consumption and smaller chip area.Chapter 4 presents a phase shifter based on injection-locked oscillator(ILO).The phase shifter uses the oscillator of Chapter 4 as the ILO.The working frequency range of the phase shifter is 2223.4 GHz with maximum phase shift range of 180°.The chip area is 540?mx 620 ?m(including pads)or 316 ?m×388 ?m(excluding pads).The power consumption of the ILO is 3.14mW.Chapter 5 presents a 28GHz rotary-traveling-wave-oscillator(RTWO).This dissertation im-proves the symmetry of the oscillator by layout optimization,which theoretically reduce the phase noise of the oscillator.Experiment results show that the working range of the RTWO is 26.72-29.95GHz.Phase noise is-99.23dBc/Hz@1MHz offset.The minimum core power is 14.6mW(@1.2V)while the chip area is 0.286(including pads)/0.114(core)mm2.Compared with other RTWOs,this RTWO has low power consumption and rather smaller chip area.Chapter 6 presents a 24GHz power amplifier and transmitter.Simulation results of the power amplifier show that it has a maximum gain of 12,708dB at 1.2V power supply.The OP1dB is 14dBm.PAE is 23.165%@OP2dB.The amplifier has a maximum DC power is 135mW with 870 ×540?m silicon area.Simulation results of the transmitter show that it has a frequency tuning range of 2.5GHz with 9.299-11.628dBm output power.The phase noise of the transmitter is-97.002dBc/Hz@1MHz offset.When supplied with 1.2V DC source,the DC power is smaller than 180mW.The chip area is 1350 x 540?m2.Finally,a conclusion of previous works and a future work prospect is presented.