Research On The Mechanism And Technology Of On-Chip Wavelength Conversion Based On Ⅲ-Ⅴ Waveguides

With the advent of the information age,the all-optical communication network with high transmission rate and large communication capacity has become an important research topic.The current communication system can no longer meet the needs of future communication for bandwidth and capacity.All-optical wavelength conversion is to convert the carrier of high bit rate data from one wavelength to another wavelength,without converting the optical signal into an electrical signal and then converting back.All-optical wavelength conversion can avoid wavelength collision in wavelength routing all-optical communication networks.All-optical wavelength conversion is one of the key technologies in all-optical communication networks.In recent years,III-V semiconductors have shown great potential in the design of nonlinear photonic devices.Integrating III-V light emitters and amplifiers on silicon substrates is the main method to achieve high-function and low-cost photonic integrated circuits.III-V nanolasers have a very compact footprint and ultra-low power consumption,which can be beneficial to silicon-based photonic integrated circuits in terms of integrated density and power consumption.Most III-V semiconductor materials are indirect bandgap semiconductor materials that can emit light.Therefore,in order to realize wavelength conversion with high conversion efficiency and large tunable range,this paper studies the design of III-V waveguide and the realization method of wavelength conversion,which provides a new method for solving the key problems of wavelength conversion.The main research contents and results of this paper include:(1)The research background and significance of wavelength conversion are introduced in detail.The theory and method of wavelength conversion are briefly introduced.The research status of wavelength conversion based on III-V waveguide is summarized.At the same time,the phase matching condition and waveguide design standard are given by combining the four-wave mixing principle and the dispersion effect in the III-V waveguide.(2)A loaded strip waveguide based on In P/In1-x Gax Asy P1-y semiconductor waveguide platform is designed,and the effective wavelength conversion based on this waveguide is studied.The TE mode effective mode area,nonlinear coefficient,effective mode refractive index,waveguide loss and waveguide dispersion of the optimal waveguide structure are analyzed by the frequency domain finite element simulation method under the perfect matching layer boundary condition.The dispersion of In P/In1-x Gax Asy P1-y loaded strip waveguide is optimized to meet the zero phase mismatch condition,and the wavelength conversion with 3 d B bandwidth of 35 nm is realized.The highest conversion efficiency is-26.7 d B.At the same time,the effects of doping coefficient y,pump power,pump wavelength and waveguide length on conversion bandwidth and conversion efficiency in wavelength conversion are also analyzed.The In P/In1-x Gax Asy P1-y loaded strip waveguide shows excellent wavelength conversion performance,which can provide design reference for the realization of all-optical wavelength conversion.(3)A new modulation format transparent AOWC scheme is proposed,which does not require phase matching and thus has good wavelength conversion tunability.The additional reflection peak(ARP)is excited by optically modulating the III-V waveguide Bragg grating(BG).In this scheme,the dynamic refractive index grating generated by the co-directional pump and the beat frequency of the signal can modulate the BG,thereby generating ARP on both sides of the undisturbed BG band gap.When the probe wave at the ARP wavelength propagates back,it is reflected by the induced ARP while tracking the signal data information at the new wavelength.Through numerical simulation,the In1-x Gax Asy P1-y Bragg gratingλ_B=2840 nm,the central wavelength of ARP isλ_l=2623.3 nm andλ_r=3103.8 nm,respectively.The central wavelength of the Ga N Bragg gratingλ_B=2040 nm,and the central wavelengths of the ARP areλ_l=1883.7 nm andλ_r=2229.7 nm,respectively.Increasing the value of nc,d can obtain more ARP.The scheme does not require phase matching,so it has good wavelength conversion tunability.