A High On-Tate Current Vertically Plug-In Source Drain Contacts Bidirectional Tunnel Field Effect Transistor

MOSFETs are widely used as the basic unit of integrated circuits due to their low cost,small area and high integration in integrated circuit production technology.In order to increase the integration density of the integrated circuits,it is important to reduce the size of the basic building block “MOSFET” as much as possible.On the other hand,for the performance improvement of integrated circuit,several novel devices are purposefully developed,among which TFET is the most representative.The current driving ability is much poor than MOSFETs.Therefore,no device is with comprehensive advantages,compared to the mainstream Fin FET technology.A TFET with a deep Schottky barrier in the U-channel is proposed in this thesis that circumvents the hot ion emission current using band-band tunneling current instead,compensating for the low forward current of the TFET,and by increasing the height of the vertical channel of the U-channel high on-state current can be generated.The hot ion emission current is minimised by a high Schottky barrier and a bilateral gate is used to generate a strong band-band-tunneling(BTBT)current as a conduction mechanism for the forward current.The introduction of assistant gate effectively stops the reverse bias drain current.The silicon body of the proposed new structure is etched into a U-shaped structure.By etching the sides of the silicon body to form a vertically inserted source-drain contact,the source-drain electrode is inserted into the vertical portion of the U-shaped silicon body on both sides at a certain height.Thereafter,the effective area of the band-tunneling generation zone near the source-drain contact is significantly increased,resulting in higher on-state currents,low reverse leakage currents,low sub-threshold swings and high switching current ratios.Furthermore,based on this,an H-shaped gate deep Schottky barrier high on-current tunneling transistor is proposed by optimising the gate structure,and parametric optimisation analysis of the two different structures is carried out to finally obtain the optimum structure to achieve excellent electrical characteristics.