340 GHz Amplifier Design Based On 0.25 μM InP DHBT Process

Terahertz technology has become a hot research field in recent years,with broad prospects in civil and military fields such as communication,electronic countermeasure and medical imaging.Terahertz system research focuses on the development of monolithic integrated circuits and highly integrated on-chip systems.The second generation semiconductor material Indium Phosphide(INP)has excellent high-frequency performance.The double Heterojunction bipolar transistor(DHBT)based on InP material has become a popular terahertz device,which promotes the progress of terahertz technology with the advantages of high power and high linearity.Firstly,based on the special effect of 0.25 μm DHBT device,this paper analyzed the working characteristics of InP DHBT device and the response methods of different means to the base expansion effect in the process were introduced.The device model was simulated and the DC bias point at 340 GHz was determined.In the third chapter,this chapter introduced the technical indexes and classification of amplifiers,and pointed out the indexes and function trade-offs in the design of amplifiers,which provides a theoretical basis for the design of amplifiers in Chapter 5.In the fourth chapter,the low loss thin film transmission line in terahertz band is realized by using the three-layer metal interconnection structure.The three-dimensional full wave electromagnetic simulation is carried out for the passive structures such as MIM capacitor,thin film resistor and GSG pad in the circuit,and the passive structure of the circuit is modeled and optimized.In the fifth chapter,designed and characterization of a 340 GHz amplifier.The amplifier used overall matching method to reduce the transmission loss and improve the gain.The on-chip small signal test system and power test system were used for testing.The chip shows a small signal gain of greater than 10 dB and a output power of more than 2 dBm across the band of 325-342 GHz.At 340 GHz the small signal gain is 10.43 dB and the output power is 3.24 dBm.