Research On The Processing Technology Of Three-Dimensional Resistive Random Memory (3D-RRAM)

Among the newly developed non-volatile memory,RRAM has the advantages of scalability,faster running speed,COMS compatibility and lower energy consumption,which make RRAM have a broad application prospect.Although at the single-component level,RRAM is superior to flash memory in many aspects,such as faster programming speed,lower programming voltage,better reliability,etc.Although RRAM on the plane has superior performance,but its storage density is low,in order to further improve the storage density,RRAM must adopt an integrated structure,that is,3D RRAM(3D-RRAM)came into being.However,in the existing researches on3D-RRAM,more researches are conducted on the performance parameters of different material systems(electrode layer and resistance layer),while there are still few researches on the fabrication process of 3D-RRAM.According to the structural characteristics of 3D-RRAM,a new processing method is proposed in this paper.The specific research contents are as follows:(1)A new process method for preparing the composite multilayer stacking structure of planar electrode and insulating layer in 3D-RRAM was proposed.First,the buffer layer was prepared by spin coating PMMA solution.The influence of key experimental parameters,such as the concentration of PMMA solution and the rotational speed of homogenizing,on the morphology of PMMA buffer layer was analyzed.Then,the effect of linear thermal expansion coefficient difference between PMMA and metallic material on the film quality was studied by sputtering metal electrodes.Finally,the process of preparing an organic polymer insulating layer with spin coated PMMA solution was studied,and the composite multilayer stacking structure of 3D-RRAM planar electrode and insulating layer was obtained.(2)In view of the composite multilayer stacked structure of the prepared3D-RRAM metal plane electrode and the organic polymer insulating layer,this paper proposed to prepare the blind pore structure of 3D-RRAM by hot imprinting process.Firstly,the anti-adhesion treatment was carried out on the imprint template to test the effectiveness of the anti-adhesion coating.The influence of key process parameters,such as imprint pressure and imprint time,on the forming quality of 3D-RRAM blind hole structure was analyzed and studied.By optimizing the imprint pressure and imprint time,a high fidelity 3D-RRAM blind hole structure was prepared.(3)According to the structural characteristics of 3D-RRAM with multi-layer planar electrodes,this paper proposes an electric-field assisted blind hole filling process.The blind hole is filled by electric-field assisted induction solution.First using COMSOL software under the action of the electric field of 3D-RRAM blind hole structure of the simulation analysis,explores the 3D-RRAM blind hole structure of the electric field changing law,studies the 3D-RRAM blind hole structure of electrode spacing,hole diameter,hole spacing and other factors on the effect of electric field intensity in the blind hole structure,finally electric auxiliary blind hole filling process was validated by the experiment can effectively promote the solution of the blind hole filling.