Simulation Of The Resistive Random Access Memory Based On Zinc Oxide Quantum Dots

With the high-speed development of artificial intelligence and the 5G's arrival,the requirements in market for storage device are more and more critical,so as to cope with new information explosion in the future.Resistive random access memory?RRAM?as one of the most popular research object for the next generation non-volatile memory,it has a lot of merits such as simple metal-insulator-metal?MIM?structure,logical operation,high speed,3D integration feasible,low power consumption,compatible with the conventional CMOS fabrication environment.3D integration and compatibility of 1T1R?one transistor one resistive?make it possible that maximum storage density,combine the computing and saving of information,which is a breakthrough of Von Neumann architecture.Besides,the multivalued storage of RRAM will provide a new direction of neural network computing.The major scientific issue for achieving controllable switching and high-performance processing-in-memory device is clearing the resistance mechanism.And this is not figured out yet,which seriously restricts the further research and manufacture of device industrialization.As a high-?material,TiO₂ has excellent resistance performance,which make it as the most potential resistive material beyond so many metal oxide materials.The widely accepted resistive switching mechanism of TiO₂ is the conductive filaments.In this paper,COMSOL software is used to simulate the conductive filaments in the resistive process of the device,in order to provide theoretical guidance for the preparation of RRAM.In this work,we use the relationship between oxygen vacancy concentration,potential and temperature of valence change mechanism?VCM?RRAM to establish partial differential equations?PDEs?and calculate the parameter changes during the on-off process of conductive filaments.A simple MIM type TiO₂ device and a stacked device with ZnO quantum dots layer were respectively constructed.The electrical characteristics and controllability of the doped quantum dot device were researched respectively by comparing the switching voltage and observing the on-off condition of the conductive filament.The in-depth study of these models will certainly provide a solid theoretical basis for the exploration of high-performance resistive memory.