| Over the last decade, resistance switching memory is a concern new type of non-volatile memory. As a candidate for a new generation of non-volatile memory, it demonstrated the potential for far more than several other storage memories. Research of electric field controlled magnetism has a crucial role in information storage. Electric field controlled magnetism can achieve high speed and low power where information is written. Multifunctional devices are becoming of concern, while it is leading the study of a variety of physical mechanisms of coupling. Coupling of resistance switching memory with magnetism is a typical example. By resistive switching behavior achieving electric field controlled magnetism, and the integration of the resistance switching and magnetic transition in one device, you can achieve multi-state memory information.The content and results of studies in this paper:1. The resistance switching characteristic and electric field controlled magnetism was measured in resistive switching device Ag/SrTiO3/Pt. The device has obvious bipolar switching characteristics, and is observed that the magnetism with the resistance switching happens. The resistance switching is due to the silver atoms redox reaction leading to the formation and dissolution of the silver conductive filaments. However, magnetic properties switching occurred change of oxygen vacancies concentration in the process of resistance switching.2、The resistance switching characteristic and electric field controlled magnetism was measured in resistive switching devices Ag/CeO2/Nb:SrTiO3/Ag and Ag/Sm2O3/Nb:SrTiO3/Ag. The device has obvious bipolar switching characteristics, and is observed that the magnetism with the resistance switching happens. The resistance change characteristic by the modulation of Schottky-like barrier with the electron injection-trapped/detrapped process at the interfaces of CeO2/Nb:SrTiO3 and Sm2O3/Nb:SrTiO3 and magnetic change is caused by oxygen vacancy concentration with resistance switching in the film material.3、The resistance switching characteristic and electric field controlled magnetism was measured in resistive switching device Ta/Ta2O5/Pt. The device was the presence of a multi-level resistance transition characteristic and also observed magnetic properties switching with the resistance switching. Multi-level resistance switching is due to form TaO2 of high electrical conductivity and the formation of oxygen vacancies conductive filaments. However, magnetic properties switching occurred change of oxygen vacancy concentration in the process of resistance switching.4、Under the condition of different sputtering, regulation of electric field controlled magnetism of Sm2O3/MgO and Nd2O3/MgO structure is different. Their physical mechanism needs further research. |
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