Research Of Digital Readout Circuit For The High-Voltage CMOS Pixel Sensor

In high-energy physics experiments,CMOS pixel sensor is an important detection technology for vertex and track detection.With the continuous upgrading of experiments,higher requirements are put forward for the detection performance of pixel sensor.The charge collection method of the high-voltage CMOS pixel sensor for charged particles is changed from thermal diffusion to drift,which not only effectively reduces the charge collection time,but also significantly improves the collection efficiency and radiation resistance performance of the pixel sensor.This subject has completed the digital readout circuit design of the high-voltage CMOS pixel sensor.The pixel array has 64 rows ×64 columns,including two parts:the pixel array digital readout circuit and the pixel array peripheral digital readout circuit.The pixel array digital readout circuit mainly adopts AERD(Address-Encoder and Reset-Decoder)priority coding structure,and realizes the priority coding of pixel unit information in a single column through a three-layer arbitration tree composed of AERD units.The peripheral digital readout circuit of the pixel array includes columnlevel AERD priority logic,readout control,FIFO,serial transmission,self-test and clock generation and other modules,realizing high-speed serial output of data.The digital readout circuit of pixel array adopts Virtuoso tool to realize circuit design,and completes simulation verification and layout realization.The peripheral digital readout circuit of the pixel array uses RTL(Register Transfer Level,register transfer level)code to complete the functional design and simulation verification.And completed the back-end design of the peripheral digital readout circuit of the pixel array,used the Design Compiler tool to convert the RTL code into a gate-level netlist,used the Formality tool to verify the equivalence of the gate-level netlist,and used the IC Compiler tool The layout design is completed,and the final size of the layout is 150μm× 3200 μm.Due to the domestic development of high-voltage CMOS pixel sensor is restricted by foreign high-voltage technology,this subject carries out the digital readout circuit design of pixel sensor based on domestic 180 nm high-voltage CMOS technology,and completes the combination of AERD readout structure and high-voltage CMOS technology,which can provide a feasible solution for the research of domestic high-voltage CMOS pixel sensor.