MAPS Pixel Design For High Energy Physics Particle Detectio

With the advancing research in particle physics and nuclear physics,higher requirements were imposed on the new detectors by the accelerators,because traditional detection methods are inadequate.The monolithic active pixel sensor(MAPS),with application of semiconductor technology,has been widely applied in various large scale physics experiments and medical devices due to high readout speed and precision.The pixel of MAPS was studied and designed in this paper,including the modeling and analysis of the charge sensing device,design of test arrays,pixel unit circuit,experimental chip and layout.A 3D model of the charge sensing device was established and simulated.With variations in the position of the MIPs hitting the pixel,1345 to 995 and 2617 to 768 electrons were respectively collected under the twin-well low resistivity and quadruple-well high resistivity process,the pixel fill factor can reached 100%.The conventional twin-well low resistivity process was adopted due to its high availability and low cost.The array consisted of four 3×3 small arrays and utilized the source follower structure for pixel units.The core layout size was 350μm×257μm,enabling the detection of charge collection in the charge sensing device used in MAPS chips.Based on the simulation and analysis of the charge sensing device,the pixel circuit and 1×8 array experimental chip were designed using the twin-well low resistivity process.After successfully completing overall simulation verification,the layout design and postsimulation were finalized.The core layout size was 800μm×64.5μm.The charge conversion gain was 101μV/e-.The equivalent noise charge was less than 40e-,and the time resolution was better than 5ns.Under the control of digital circuitry,the position,time and energy information of particles could be read out in the experimental chip.