Research On High-Power RF Power Supply System Based On GaN Power Device

6G communication technology will have higher transmission speed and lower trans-mission delay,and at the same time achieve the full coverage of sea,land,air and space communication.The full coverage of communication needs to launch a large number of low orbit communication satellites.As the core of the electric propulsion unit of low orbit communication satellites,radio frequency power has broad prospects for future develop-ment.At present,the RF power supply on the market is large in size,low in efficiency,and can not meet the harsh working environment in space.Therefore,this paper aims to develop a lightweight,high-power,high-efficiency RF power supply with a wide range of plasma load driving ability on this basis.In this paper,class E power amplifier circuit is selected as the main circuit of the sys-tem,and gallium nitride power device is selected as the switching device of the system,so as to achieve the goal of high efficiency and lightweight system.An improved design method for the circuit parameters of class E power amplifier is presented,and the influ-ence of the output capacitance C_ossof gallium nitride power device is given priority in calculation,which ensures that the designed power amplifier circuit can work under the condition of ZVS when driving a wide range of plasma load,and improves the output efficiency of the system.Secondly,a multi-channel direct power synthesis method based on resonant network is proposed.In order to solve the problem of low single-channel output power of class E power amplifier based on gallium nitride switching device,the synthesis principle and circuit design method of three power synthesis methods are analyzed.It includes the power synthesis method based on voltage,the power synthesis method based on current and the multi-channel direct power synthesis method based on resonant network.Through comparison,the multi-channel direct power synthesis method based on resonant network with small volume,low cost and high efficiency is finally selected.In order to improve the heat dissipation performance of the system,a circuit heat dissipation design method based on through-hole was proposed,and the junction temperature of the improved method was about 10? lower than that of the traditional method at gallium nitride rated condition.Finally,in order to improve the debugging efficiency of the RF power supply sys-tem,a simulation study is carried out on the mismatched parameters of the two synthetic Class E power amplifier.The simulation results basically include the possible situation of the mismatched parameters of the power amplifier circuit v_dsand the changes of the circuit power and efficiency.The loss of switching device in RF power supply system is simulated by Matlab,and the safe working area of gallium nitride device is obtained.The performance test of the designed RF power supply system was carried out,including wide-range load driving experiment and system power output experiment.Finally,the output power of the RF power supply system was 968W at 13.56MHz working frequency,and the efficiency was about 88%,which met the design requirements.