Research On Digital Model Of X-Band Phased-Array Transceiver Module

In recent years,with the development of modeling simulation tools and technology,the research on the large-scale system engineering of virtual digital prototypes has accumulated a lot of experience in the field of radar electronic countermeasures and communication systems.However,it is difficult and time-consuming to establish high-precision models of microwave active devices,so ideal models of commercial simulation software or transfer function models based on signal flow are generally used to simulate the characteristics of RF microwave devices in system research,but these methods lack accurate description of nonlinear products of the system.Especially with the development of 3D packaging of rf Microsystems,active chips and passive interconnection structures in T/R components are more difficult to measure and debug in real objects.Therefore,it is very important and necessary to study the digital model of phased array transceiver module.In addition,the trend of domestic production of electronic products is developing rapidly,and the in-depth research on the hardware and software supporting the corresponding industrial chain needs to be gradually improved.Aiming at the problem of insufficient modeling and simulation accuracy of phased array transceiver module system,this thesis adopts precise chip modeling technology based on S2D model to study T/R module system model.The main research contents are as follows:(1)Research on-wafer measurement methodsBased on the theory of microwave network and microwave measurement,a probe platform and a vector network analyzer(VNA)measurement system were built in the purification room by using the technology of multi-port microwave chip on-wafer measurement.Take the calibration and measurement for multiport power splitter chip,amplitude-phase multifunction(MFC)chip containing attenuation,phase shifter,amplifier and switch control function,front-end multifunction chip containing power amplifier(PA)and power switch,and broadband low noise amplifier(LNA)chip.Finally,get the datas of the four chips containing large and small signal,noise,power and other characteristics.(2)Research on high-precision chip modelingBased on the theory of polynomial behavior model and mainly using the modeling method of S2D model,the multi-port single-chip size signal,noise,power and other characteristics of the above four chips were analyzed respectively.The power splitter chip uses 5-port S parameter modeling technology to combine several s3p data files into one s5p data file.The accuracy of model shows that the reflection coefficient,insertion loss(IL)and isolation degree(ISO)is less than 0.95 d B.Except for the passive power splitter,the other chips contain active amplifier function,generating nonlinear products.Therefore,use S2D modeling technology,the VSWR error of the input and output port of the model is less than 0.1 d B.In transmitting branch,the Gain error is less than 0.6d B and the output power(P_out)error is less than 1 d Bm.In receiving branch,the noise factor(NF)error is less than 0.5 d B.(3)Research on digital system model of phased array transceiver moduleBased on the theory of RF microwave circuit system,the digital module model is divided into active chip model and passive interconnection structure model.By using three dimensions(3D)electromagnetic structure modeling method,the transition structure of input and output of T/R module was disassembled and segmented,and the system cascade model was established combining with the high-precision chip model.The field-circuit co-simulation results show that the digital model of phased array transceiver module is more suitable for the three-dimensional structure of the actual prototype,and the output high-precision simulation results successfully predict the curve trend of the prototype.Within the 8-12 GHz,in the transmitting branch,the output power is greater than 35 d Bm,the gain is greater than 26 d B;in the receiving branch,the noise coefficient is less than 3 d B and the gain is greater than 15 d B.