Research On InP HBT Device Model Of Millimter And Submillimeter Wave

In recent years,the rapid development of wireless communication industry has promoted the development of integrated circuits towards ultra-high frequency.Accordingly,the precise modeling of millimeter and sub-millimeter wave devices,a key technology in ultra-high frequency integrated circuits,has become a research hotspot.InP HBT transistor,with the advantages of high mobility,high ratio-frequency output power,high breakdown voltage,low phase noise,high power added efficiency as well as high integration ability,is very suitable for broadband and high power circuit,which has a broad application prospect in wireless communications,military electronic equipment and other fields.InP HBT device feature analysis and modeling are complementary to the InP process line.Accurate model can predict the defects of the device itself,so as to optimize the process,and the improvement of the process will enhance the performance of the device.Secondly,accurate device model is an important basis for InP HBT circuit design.This thesis mainly conducts the research from the following aspects:(1)Accomplishing the modeling of InP HBT process on-chip test structure in terahertz frequency.Firstly,the one-side G-S-G pad of TRL structure was modeled.Then,the open and short structures of G-S-G pad were modeled respectively.The open and short model topology,as well as the model parameter extraction methods were verified in the frequency range of 0.1-325 GHz.(2)In order to obtain an accurate small signal model,the topology of the intrinsic region was based on an equivalent circuit of ? type,making it conform to the physical structure of InP HBT devices.Fifteen parameters were used in the model to achieve a compromise between the simplicity and accuracy.(3)Based on the measured data,the fitting accuracy of DC and RF curves for VBIC,HICUM and AgilentHBT models was compared,and the model with the highest accuracy was selected.AgilentHBT model was used to complete the modeling of transistor in two frequency bands,75-110 GHz and 220-325 GHz.Based on the obtained model,a power amplifier is designed and taped out,the simulated and measured results of the circuit are good.