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Research On The Current Controllable Driver Stage In The GaN Gate Driver Integrated Circuits

Posted on:2022-01-18Degree:MasterType:Thesis
Country:ChinaCandidate:F Z MengFull Text:PDF
GTID:2518306740990549Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
Switching gate charge of the GaN device is provided by the driver stage in GaN gate driver ICs(Integrated Circuits).The current capability is traditionally controlled by the gate resistance cascaded with the gate of the GaN device.The segmented independent control of the current capability at different periods cannot be achieved with traditional driver stage circuits.Therefore,a new self-setting closed-loop self-tuning driver stage circuit with discrete closed-loop control method is proposed to realize segmented independent adjustment of the driver stage current during the d VDS/dt and d IDS/dt periods of the GaN device.Development of the driver stage circuit in GaN gate Driver ICs is firstly introduced.Then,the principle of the traditional driver stage circuit is demonstrated with theoretical analysis and simulation verification.and the role of GaN device parasitic parameters in the design of traditional driver stage circuits is analyzes in detail.On this basis,a self-setting driver stage circuit with delay setting and pulse width setting functions is proposed.The monotonic variability of the setting value will not change with changes in process and temperature.In order to realize the function of closed-loop self-tuning,a control method of setting initial value,detecting phase difference,and monotonic trimming is proposed.The accuracy of the control process will not be affected by the delay of trimming signal transmission by this method.Finally,based on the 0.18?m BCD process,the layout was drawn and taped out.However,due to the tight production capacity of semiconductor manufacturers,the tape-out has not yet ended,and only post-simulation results are available.The simulation results show that the independent ajustment of the driver stage currents during d VDS/dt and d IDS/dt periods is realized.The process corner simulation results indicate that d IDS/dt adjustment range can reach10A/1.19ns to 10A/2.51ns,d VDS/dt adjustment range can reach 100V/1.19ns to 100V/2.55ns.and the maximum error of stage matching is less than 3.6ns,which meets the requirements of design specifications.
Keywords/Search Tags:GaN gate driver ICs, current capability of driver stage circuit, segmented independent adjustment, closed-loop contol
PDF Full Text Request
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