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Investigations On GaAs Millimeter Wave Transceiver Intergated Circuits

Posted on:2022-10-01Degree:MasterType:Thesis
Country:ChinaCandidate:W T ZhuFull Text:PDF
GTID:2518306740495884Subject:Electromagnetic field and microwave technology
Abstract/Summary:PDF Full Text Request
With the rapid growth of mobile communication system capacity demand and the continuous development of mobile communication technology,the low frequency radio spectrum is becoming saturated.With its huge available bandwidth resources,millimeter wave band has become the focus of research and development,and millimeter wave communication technology has a wide range of prospects.The demand of millimeter wave chip is growing because it is the core component of communication system,millimeter wave imaging system,radar and etc.GaAs compound semiconductor is widely used in high integrated and high performance MMIC because of its high electron mobility.In this paper,the millimeter wave band of GaAs technology is studied and several chips are designed.The details are listed as follows:1)The integrated circuit of millimeter wave transmitter based on GaAs technology is designed and implemented,which can work in 5g millimeter wave communication experimental frequency band of 37-43.5GHz.The chip integrates frequency multiplier,driving amplifier,Lo filter,mixer,RF filter and other sub circuits,which can realize the functions of frequency doubling,amplification and mixing.The passive mixer can be used not only for up conversion but also for down conversion,so the chip can be used as transmitter or receiver module.The first mock exam is two modules,one is the local oscillator module,which contains frequency doubling and amplification circuit,and the size is 1.9mm×1mm.The other module contains frequency doubling,amplification and mixing circuit,and the size is 2.8mm×1mm.The simulation and test results verify the correctness and feasibility of the structure.2)A broadband low noise amplifier based on GaAs technology is designed and implemented,which can work at V-band of 50-75 GHz.The low noise amplifier can be connected with the antenna to amplify the signal with noise reduction at the same time.This chapter studies the working principle and optimization by design and implementation of LNA.Several fabrications of different processes show that the measured results are consistent with the simulation results.
Keywords/Search Tags:Millimeter wave ICs, GaAs, Transmitter chip, LNA
PDF Full Text Request
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