| In recent years, with the rapid development of muti-media, the increasing datas transfering among different muti-media equipments needs more complex communication mode. There are lots of applications below 10 GHz, such as Bluetooth, wifi, GSM and GPRS which make the spectrum very crowd below 10 GHz. The millimeter wave spectrum is attractive by the advantage of wide bandwidth, abundant frequency resources, high speed data transfer (6.7 GHz) compares to low frequency bandwidth.Based on architecture, operation theory and deign method of millimeter wave transmitter, the main researches and innovations of this thesis focus on the power consumpation reducing, area shrinking and stability improving, and the research results achieved have been listed as following:(1) A high isolation stacked transformer is proposed, and a compact 2-π structure transformer model is given. The isolation of the high isolation stacked trasnformer is improved by 14 dB compares to the normal stacked transformer. The 2-π structure transformer model we proposed which only needs seven elements while achieves less than 5% model error.(2) A transformer based low power consumption and compact CMOS power amplifier and a transformer and transmission line based wideband CMOS power amplifier using IBM 130nm CMOS process are presented. The area of the compact millimeter wave power amplifier is 463 μm×168 μm, and the output 1 dB compression point is 5.5 dBm. The area of wideband millimeter wave CMOS power amplifier is 630 μm×225μm while its bandwidth is 20 GHz (47 GHz～67 GHz), and achieves 9.6 dBm ouput 1 dB compression point.(3) In order to decrease the effect caused by bonding wire beteween chip and printed circuit board (PCB), a 50 Ω characteristic impedance bonding wire which can decrease the effect caused by bonding wire are proposed. The 50 Ω characteristic impedance bonding wire can keep the signal integrity inbetween RF signal pad and bonding wire. Since the Electro-Static discharge (ESD) will cause ciucuit failure, an ESD protection circuit based on transformer is proposed, and an ESD protection circuit which adding to the cent-tap of transformer is proposed in order to keep the impedance of circuit continuity.(4) In order to avoid using the high requirements of millimeter wave synthesizer directly, an injection locked quadrapler and a mixer based injection locked oscillator are presented. With the injection locked quadrapler or the mixer based injection locked oscillator, the synthesizer’s output signal frequency could be much lower than millimeter wave system’s local oscillator frequency. Nolinearity of the transistor generates high order harmonics, and the pull-pull circuit extracts the fourth harmonic while decreases odd harmonics and injects the fourth harmonic to the injection lock oscillator. Mixer multiplies two different frequency signals, and the output signal is injected into an injection locked oscillator which generators a high frequency output signal.(5) A low intermediate frequency 57 GHz～66 GHz transmitter based on IBM 0.13 μm CMOS process is proposed. This CMOS low intermediate frequency transmitter consists of passive Rat-race balun, Lange coupler, powe combiner, I/Q mixer, drive amplifier and power amplifier. I/Q upconverter mixer is adopted to reject the image problem. Under the considerations of the area, power consumption and process, the specifications of the transmitter and building blocks are decided. The Advanced Design System (ADS) software is used to model the transmitter according to the specifications. Including all the pads, the area of the transmitter is 3 mm× 1.05 mm, the conversion gain is 17.17 dB, output saturation power is 9.53 dBm, and the power consumption of this transmitter is 168 mW.
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