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Fabrication And Characterization Of Physical Transient Bio-resistive Memory

Posted on:2022-12-26Degree:MasterType:Thesis
Country:ChinaCandidate:Y K ZhangFull Text:PDF
GTID:2518306614457364Subject:Master of Engineering
Abstract/Summary:PDF Full Text Request
Physical transient electronic device is an innovation to the traditional electronic device,its main characteristic is that under certain conditions,the device can partially or completely degrade and disappear in function or physics.Natural biomaterials in nature have the characteristics of non-toxicity,easy access,degradability,and environmental friendliness.They have gradually emerged in the field of physical transient electronic devices and have become a research hotspot.Using natural biomaterials silkworm hemolymph,egg albumen:silver ions,egg albumen:graphene quantum dots and gelatin:graphene quantum dots as active layers,physical transient bio-resistance memory was fabricated on flexible substrates,respectively.The fabrication process,electrical properties,resistance switching mechanism and dissolution properties of the devices were studied.The ON/OFF current ratios of the devices based on silkworm hemolymph,egg albumen:silver ions,egg albumen:graphene quantum dots and gelatin:graphene quantum dots are 5.23×10~2,2.00×10~4,1.19×10~4 and 5.24×10~3,respectively,and the retention time reaches 10~4 s.The degradation time of the active layers of the four devices in deionized water is 30 min,20min,20 min and 15 min,respectively,and the resistive switching behavior of the devices disappeare completely after degradation,showing the characteristics of physical transient.The device exhibits good flexural stability and can function normally in the flexed state.The resistive memory using natural biomaterial gelatin as the substrate can not only be transferred to different substrates,but also exhibits good resistive switching behavior.The device can be completely degraded within 1 min when placed in deionized water,with good physical transient properties.
Keywords/Search Tags:Resistive random access memory, Biological materials, Physical transient, Electrical properties, Conduction mechanism
PDF Full Text Request
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