Study On The Effect Of Interface Behavior Of Al And TiO₂/ZnO Thin Films On The Mechanism Of Resistive Switching

As electronic devices gradually became popular"intelligent","downsizing",in order to to meet the development demands of the era of big data,the storage of information technology has put forward higher requirements.At present,in the traditional non-volatile memory,the flash memory has approached the physical limit that it can bear in the miniaturization process.Therefore,researchers have been seeking more excellent storage technology to meet the demand for memory of the times.Resistive random access memory has attracted much attention for its advantages of high storage density,low power consumption,simple structure,fast reading and writing speed.Furthermore,the resistive random access memory structure uses a simple"MIM-type"structure and a diversified variety of resistive random access materials,so that the resistive random access device is expected to become a candidate for a new generation of non-volatile memory.Thus,the search for resistive materials with excellent performance,the study of electronic transmission methods in the resistive random access memory,and the factors affecting the performance of the resistive random access memory have become urgent problems to be solved.In this paper,simple binary oxides are mainly used to prepare resistive random access memory.The resistive switching mechanism in the resistive random access memory device is systematically studied,and the discrete differences in the parameters of the device during operation are optimized.First,the Al/TiO₂/FTO resistive random access memory was prepared by the sol-gel spin coating method.The electronic conduction mode of the resistive switching device during operation was studied,and the influence of the interface effect between the Al electrode and TiO₂on the resistive switching parameters was analyzed.Moreover,the defects inside the device film were adjusted by adding Cu ions to the precursor solution and changing the growth environment of the film.Then the resistance characteristics and internal mechanism of Al/TiO₂:Cu/FTO resistive switching devices were investigated.The electrical performance results show that the copper-doped film produces more defect states,as well as the switching performance and stability performance of the device are excellent.On the other hand,by comparing with Al/TiO₂/FTO devices,it is found that Al/TiO₂:Cu/FTO memory devices have a CRS effect in the high voltage region,which can effectively solve the application problem of current crosstalk in the reduction of devices.Further,Al/ZnO/FTO resistive random access memory was prepared by sol-gel spin coating method,and the influence of the interface between Al and different binary oxides on resistive random access devices was studied.The resistive switching model was constructed and the thickness of the ZnO resistive switching layer was adjusted,and the influence of the height of the Schottky barrier between Al/ZnO on the electron conduction mode in the device was deeply analyzed.The results show that the Al/ZnO/FTO device exhibits obvious bipolar resistance effect accompanied by negative differential resistance effect.Through electrical performance analysis,it was found that the device follows the classic SCLC conduction mechanism.Further study shows that the resistance properties and negative differential resistance effect of ZnO thin film devices are changed with different thickness.The interfacial barriers formed by ZnO films with different thicknesses and Al electrodes affect the resistive performance of Al/ZnO/FTO devices.Finally,the one-dimensional nanorod Al/ZnO NRAs/seed layers/FTO resistive random access memory was prepared by sol-gel spin coating process and hydrothermal method.The influence of the interface effect between Al and different dimensions on the resistance performance and mechanism was mainly studied.It was found that the device exhibited a bipolar resistance switching effect and was accompanied by a negative differential resistance effect.Due to the coexistence of resistive switching and negative differential resistance effects,which indicates that it has high academic value and potential application prospects in the field of nanoelectronics.