Research On The Model Of Carbon Nanometre Tube Field-effect-transistor

As the size of transistors decreases,the unfavorable "secondary effect" encountered by silicon-based devices becomes more and more difficult to overcome,and the development of new materials is imminent.Carbon nanotubes are expected to become next-generation semiconductor materials due to their special structure and excellent electrical properties.Carbon nano-metre tube FET(CNFET)based on carbon nanotubes will have significant advantages in terms of speed and power consumption.The model is the basis of circuit design,and the accurate model is of great significance to the study of the practical application of CNFET.At present,the CNFET model has not yet formed an industry standard,and the working mechanisms of different types of CNFET are quite different,and it is difficult to establish a unified general-purpose model.The existing models also lack reasonable and feasible parameter extraction methods.This article has carried out research on the models of MOS-like CNFET and Schottky barrier CNFET(SB-CNFET).The main work and contributions are as follows:1)In order to deepen the understanding of the CNFET model,the structure and electrical properties of carbon nanotubes are studied,and the advantages of CNFET compared with traditional field effect tubes are explained.According to the specific working mechanism of CNFET,the MOS-like and Schottky potential are introduced.Barrier type and tunneling type CNFET.2)The VS-CNFET model based on virtual source modeling technology is studied.This model is only suitable for MOS-like CNFETs,and the virtual source eigen equations are deduced in detail;the CCAM model suitable for SB-CNFETs is studied,and the model is deduced.The intrinsic current equation and the metal tube equation of the empirical model.3)According to the principle of the VS-CNFET model,a DC parameter extraction method was proposed,and the extraction method was used to complete the parameter extraction work of IBM's test data,which verified the feasibility of the parameter extraction process.4)A 13-parameter small-signal model is proposed for the multi-finger SB-CNFET,and the parasitic parameters are extracted based on the test data.The extraction process of intrinsic DC parameters and scattering parameters is established for the CCAM model.The results show that the proposed small signal model fits well with the measured values,and the parameter extraction process is reasonable and efficient.