Research On Heterogeneous Integration Process Of Compound Semiconductor And Si CMOS

Nowadays,silicon-based integrated circuits are limited by material characteristics,and the integrated size has gradually approached the physical limit.In order to promote the development of integrated circuits,heterogeneous integration technology has become one of the important ways to break through device performance and continue Moore's Law.This paper researches the heterogeneous integration of compound semiconductor and Si CMOS based on ultra-thin substrate transfer technology.The process compatibility and reliability problems faced by the heterogeneous integration process are discussed in details.The specific work is as follows:Aiming at the support and holding of ultra-thin wafers,this paper studies the temporary bonding technology based on new temporary bonding materials,which ensures the stable support of the thin-layer structure during the entire process and expands the process window.By optimizing the multi-stage thinning process,this paper solves the problem of the non-uniform thinning process problem,realizes the precise control of the thinning thickness error,and completes the preparation of the ultra-thin thin layer with good uniformity.This paper carried out the research of BCB-based polymer bonding technology,successfully realized the BCB peroanent bonding process,and improved the bonding alignment accuracy to 2 microns,and finally realized the precise transfer of the thin-layer device structure to the target substrate.Aiming at the problem of high-quality interconnection between integrated devices,this paper researches theetching process of high-vertical BCB via.After optimizing relevant process conditions,the highly vertical BCB vias is realized.The heterogeneous metal contactwill cause metal diffusion,IMC transformation and the generation of Kirkendall voids.It seriously affect the quality of interconnection.This paper explores the influence and evolution process of this effect and improve the quality of interconnection by using barrier metal.The process technology explored in this paper verified the feasibility of the heterogeneous integration scheme and laid a solid foundation for the more advanced heterogeneous integration technology in the future.