3D NAND Reliability Research Under High And Low Temperature

3D NAND flash memory has become the mainstream data storage medium in current electronic devices due to its advantages of high storage density,strong cost competitiveness,and fast reading and writing speed.Industrial and aerospace fields have strict requirements for the reliability of 3D NAND at high and low temperatures.3D NAND has large differences in cell structure,array architecture and manufacturing processes,which makes 3D NAND's performance at high and low temperatures uneven.Therefore,studying the reliability of 3D NAND flash memory chips at high and low temperatures has very important practical significance and application value.In order to study the reliability of 3D NAND at high and low temperatures,this paper designs a set of 3D NAND reliability high and low temperature automated test platforms.And on the basis of domestic and foreign 3D NAND reliability research results,combined with high and low temperature experimental standards,designed a series of 3D NAND high and low temperature experimental programs,selected 5 mainstream 3D NAND flash memory chips,and tested 5 models through the 3D NAND high and low temperature automated test platform The chip has undergone high and low temperature reliability tests in terms of durability,data interference,and data retention.The results of the experiment show that in terms of the durability of 3D NAND,the durability and reliability of MLC at high and low temperatures is more advantageous than that of TLC,and the impact of low temperature on the durability of 3D NAND is more serious than that of high temperature.In terms of data retention,different levels of P/E times have different effects on the data retention capability of 3D NAND at high and low temperatures.When the read/write cycle has been destroyed to affect the stability of the flash memory array structure,the data retention capability will be affected.Serious impact.In terms of interference,high and low temperatures have a greater impact on the word lines and bit lines of the edge structure of the flash memory array.In this paper,through the reliability test experiment,the original error number and operating time of 5 flash memory chips under high and low temperature environments are collected,and the test results are analyzed and researched,providing new ideas and ideas for the high and low temperature reliability research of 3D NAND flash solution.