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Research On Substrate Manipulator Applied To MBE Equipment

Posted on:2022-03-20Degree:MasterType:Thesis
Country:ChinaCandidate:Y F WangFull Text:PDF
GTID:2518306572498764Subject:Mechanical engineering
Abstract/Summary:PDF Full Text Request
In the semiconductor field,the technology of new materials and new devices is increasing day by day,and the semiconductor equipment technology located in the upstream of its industrial chain is becoming more and more important.Domestic semiconductors started late,and there is a certain gap with the leading level in foreign industries.The research and development of domestically produced semiconductor equipment with completely independent property rights is the most important part of the development of my country's semiconductor industry.This article focuses on the most important molecular beam epitaxy equipment(MBE)among the third-generation semiconductor equipment.In order to realize the localization of its core components,a sample stage device for molecular beam epitaxy equipment is designed.In this paper,a multi-physics coupling numerical model is used to simulate the design of the sample stage components,explore its structural parameters and improve performance indicators.First of all,analyze the configuration of the existing sample stage,clarify that the important index of the sample stage is the uniformity of the substrate temperature,determine the radiant heating instead of induction heating,and establish the sample stage structure.Research the numerical theory and establish a three-dimensional simulation numerical model,refine the setting of various boundary conditions of the model,and compare the meshing plan to determine the highest quality mesh model.Secondly,a single and dual-zone heat source framework was established to explore the influence of the structural parameters of the sample stage on the temperature uniformity of the substrate sheet.Under the single-zone structure,the cross-sectional shape of the resistor and the reflectivity of the reflector are changed to make it clear that the temperature uniformity is proportional to the flatness of the resistor and the reflectivity of the reflector;the temperature is extremely poor under the optimal structural parameters: 26 K in the low temperature zone and 79 K in the high temperature zone.Under the dual-zone structure,change the inner zone diameter to determine the dual-zone division ratio;change the height of the substrate,and the uniformity increases with the decrease of the spacing;when the lower reflector is set up,the uniformity first decreases and then increases as the inner diameter of the lower reflector decreases;Reduce the power superimposition effect of adjacent areas by separating the twozone distance.Obtain a better configuration of structural parameters.Establish a joint solution scheme to optimize parameters,use optimized Latin square sampling to establish data samples,use response surface models to establish approximate models and verify their accuracy;use multi-island genetic algorithm to optimize parameters to obtain optimal structural size parameters and their corresponding temperature indicators,low temperature Zone 5K,high temperature zone 18K;the uniform area ratio is 100% in the low temperature zone and 87.9%in the high temperature zone,and the temperature uniformity reaches the design target.Then,the relationship between the resistance thermal control time constant ? and the size is studied,and the thermal control is inversely proportional to the thickness.Verify the resistance thermal stress distribution to determine the thickness value,calculate the resistance value to verify the power,and match the power supply.Consider the influence of the generated magnetic field on RHEED components,study the distribution of electromagnetic field,and establish the electronic deflection tracking model to determine the magnetic field interference minimum configuration,current introduction method and deflection compensation value in order to accurately determine the degree of magnetic field influence.Determine the electrode material and verify the electrode resistance,contact resistance and power consumption.Study the stress distribution of the frame structure of the sample stage and verify the feasibility of the scheme.Finally,the feasibility of the designed sample platform was verified,and the temperature uniformity index and temperature repeatability of each temperature zone were tested.The results show that the actual temperature index of the sample stage is consistent with the design plan,which meets the design requirements.
Keywords/Search Tags:Molecular beam epitaxy, Substrate manipulator, Radiant heater, Finite element method, Optimization algorithm
PDF Full Text Request
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