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Fabrication And Properties Ofβ-Ga2O3 Film And Its Composite Films By Laser Molecular Beam Epitaxy

Posted on:2013-02-01Degree:MasterType:Thesis
Country:ChinaCandidate:J J GuoFull Text:PDF
GTID:2248330371969698Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
With the development of science technology and the progress of the society, Galliumoxide as an band-gap semiconductor material can be prepared to deep ultraviolet transparentconductive film, which have more and more application in many domains, such as hightemperature oxygen sensors, ultraviolet detectors, photoelectric device and transparentelectrodes. Since the coming of 21th century, new type transparent conductive oxide films areneeded massively in the flat panel display, buildings field and so on. The study of the galliumoxide film become the hotspot of many countries.This paper discussed the preparation method, properties and application of the galliumoxide film. High quality gallium oxide deep UV transparent film was prepared by lasermolecular beam epitaxy method (without annealing). In the process of the preparation, weresearched the infulence of different oxygen partial pressure on the surface morphology andoptical properties of the gallium oxide deep UV transparent film. The results showed that thefilm has the smooth surface and high quality crystallization when the oxygen partial pressurewas controlled at 10-2Pa. The film has blue glow characteristic and deep UV high transparentcharacteristic. In film, Ga1O4expansion and bending vibration mode is primary, and the Ga—Ochain takes second place. Based on the above characteristics, the film can be used to transparentelectrodes which have oxygen sensitive characteristics, solar panels, light device and so on.In addition, according to characteristics of the zinc oxide material, in this paper we alsoused the laser molecular beam epitaxy method to prepare the gallium oxide-zinc oxidecomposite film. The different substrate temperature could influence the surface morphology,crystal quality, optical transparent rate and band-gap of the film. Besides, this paper showed thecomparison between the composite film and gallium oxide film. We analysed the compositefilm thoroughly by using the X-ray diffraction, atomic force microscope, UV spectrophotometer,Xe lamp steady state fluorescence spectrometer and the Hall measurement . The results showedthat when substrate temperature keep at 750℃, the film surface morphology and crystallizationis better than the others. The film has obvious blue glow characteristic. The UV transparent rate of the film becomes high with substrste temperature increasing.Using the same method, we fabricated and researched the gallium oxide composite filmwith zinc oxide nanolayer. And through the research of X-ray diffraction spectrum, crosssection SEM figure, UV transmission spectrum, band-gap, photoluminescence spectrum andHall measurement, we understanded the characteristic of the film compared with the result ofgallium oxide film. The futher reseach is needed for futher exploration.
Keywords/Search Tags:gallium oxide film, laser molecular beam epitaxy method, composite film, ZnO nanolayer
PDF Full Text Request
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