| his thesis presents an extensive study of the growth and electrical properties of GaAs grown by molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE) at 300;The electrical conduction in the MBE-grown LT-GaAs was via a hopping mechanism, which showed a higher onset temperature ;These LT-GaAs layers can be used for different device applications. A thin MBE-grown LT-GaAs layer (50;AlGaAs/GaAs heterojunction bipolar transistors with a MEE-grown LT-GaAs base showed a common-emitter dc current gain... |
