A Design Of 4Kb Memristor Memory Chip

With the development of the era of big data,the demand for data storage in all walks of life is increasing.Data storage is inseparable from memory,and as an important part of the storage industry,semiconductor memory has developed rapidly.In recent years,the popularity of portable devices has increased the demand for large-capacity,high-speed,non-volatile memory.The development of traditional flash memory(Flash)has encountered technical bottlenecks.At this time,as a new type of semiconductor memory,memristor is featured by the fast read and write speed,low power consumption and compatibility with traditional CMOS technology,and is considered as one of the candidates for the next generation of new non-volatile memory.Therefore,the research of memristor chips is particularly important.The main difficulties in the current design of memristor chips include overwrite protection and resistance drift.This article first introduces the current various memories,and then separately introduces the classification of memristors and their memristive mechanism,as well as the research progress of memristor chips in china and abroad.The next step is mainly to test the electrical characteristics of the memristor device prepared in the laboratory,and obtain the operating voltage and its high and low resistance values to provide design parameters for subsequent chip design.The second is the design of individual modules in the chip.All designs in this article are based on the CSMC180 nm process library of Huarun Shanghua.The main circuit modules include LDO circuit,read-write operation circuit,etc.In order to facilitate circuit simulation,a simple memristor VA model is also designed.Finally,some key problems in the design of memristor chips are discussed,including Multi-voltage operation;prevent overwrite current limit operation;read and write voltage delay and other issues,and we provide our own solutions to improve: the wordline gate voltage control method.Finally,a read and write operation simulation was performed on the chip as a whole,and the performance reached a write speed of less than 10 ns and a read speed of about 20 ns.