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Research And Design Of Memristor In Digital Logic Circuit

Posted on:2022-07-23Degree:MasterType:Thesis
Country:ChinaCandidate:L P LiFull Text:PDF
GTID:2518306341456384Subject:Electronics and Communications Engineering
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As integrated circuit technology continues evolving,the size of the transistor has approached the physical limits of the device,brought limitations that need to be overcome by finding alternative techniques.Memristors are non-linear circuit devices with memory function and are classified as the fourth basic circuit element along with capacitors,inductors and resistors.Its non-volatile characteristics,variable resistance,nanometer size,CMOS process compatibility and other characteristics can become an ideal substitute for transistors.First,this paper describes the concept of the memristor by introducing the linear ion drift model proposed by HP Lab,theoretically analyses the model and implements its i-v characteristics through software simulation.Then it introduces the Pspice mathematical model of the mem?TH threshold memristor and enumerates the advantages of the mem?TH threshold memristor in the design of digital logic circuits.The advantages of the mem?TH threshold amnesia in digital logic circuit design are listed.The switching characteristics of high and low resistance and the logical applications that can be realized are analysed by the i-v curve of the mem?TH threshold amnesia.Secondly,on the basis of the above theoretical analysis,the article designs a TiO2 memristor simulator circuit,the circuit not only presents in the output characteristics and the ideal TiO2 memory resistor closer to the hysteresis curve of the i-v characteristics,can be realized in the laboratory environment simulator i-v characteristics of the simulation,but also through the microcontroller to achieve the controllable of resistance of the memristor and the threshold,due to the structure is simple,the devices used are common and easy to implement.Then,this paper designs and implements a new three-terminal threshold memristor analogue circuit in the light of the mem?TH threshold memristor mathematical model.The output characteristics of this amnesiac not only exhibit a hysteresis curve past the origin,but also close to the mathematical model of the amnesiac i-v characteristic curve,with more obvious resistance conversion characteristics,and a third control port enables the adjustable threshold of the amnesiac,which is more flexible for use in digital logic circuits.The article then applies the mem?TH threshold memristor and the designed threshold three-terminal memristor to the design of digital logic circuits.Using the mem?TH threshold memristor,a programmable CMOS hybrid mem?TH digital logic operation unit circuit is designed to implement the three basic logic functions of AND,OR and NOT in the same circuit,and the NAND gates are optimised to implement a Boolean logic completion set with level as output logic judgements.Finally,the article also attempt to apply the threshold three-terminated memristive to the field of multi-value logic,to combine it with a CMOS device to design a new three-value memristive logic circuit,which implements a two-input,ternary NOT gate,ternary NAND gate,ternary NOR gate,ternary XOR gate circuit.
Keywords/Search Tags:Memristor, TiO2 Emulator circuit, Threshold three-terminal memristor simulator, Switching characteristics, Multi-value logic circuits
PDF Full Text Request
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