Research On Electromagnetic Sensitivity Of SOI Technology SRAM Chip

In recent years,the integrated circuit size has been continuously reduced,the operating frequency has gradually increased,and the working environment has become more and more complicated,which has made the problem of integrated circuit electromagnetic sensitivity more and more serious.Silicon on insulator(SOI)as the mainstream technology,relative bulk silicon technology it has been paid more and more attention in the research of electromagnetic sensitivity.In this paper,the electromagnetic sensitivity of SOI technology SRAM chip is tested and studied according to IEC 62132-1 and IEC 62132-4 test standards.The main research contents are as follows:1.The electromagnetic sensitivity of SOI technology SRAM chip is studied in detail at room temperature.It includes a comparative study on the sensitivity test of the SRAM chip’s address,data,control,power and ground pins,and a comparative study on the electromagnetic sensitivity of the same function pin under different operating conditions.Firstly,the failure mechanism caused by electromagnetic interference is analyzed from the MOS level,then the test board that meets the test requirements is designed according to the test standards,and finally the sensitivity test platform is built to complete the sensitivity test research.It can be seen from the test results that the the address pin has the worst immunity ability in the read state,and the data pin has better immunity ability.In the write state,the data pin has the worst immunity ability,and the address pin has better immunity ability.The read enable control pin has good immunity ability in both the read and the write states.It can also be seen that the electromagnetic sensitivity of the same pin in different working states is significantly different.2.Based on the DPI test standard,the temperature factor is considered,the temperature effect of SOI technology SRAM chip power supply and ground pins electromagnetic sensitivity is studied.Firstly,the influence of temperature on electromagnetic sensitivity is analyzed from MOS level,then a test platform is built which can be used for temperature and electromagnetic interference to act on SRAM chip at the same time,and finally the test and analysis are completed.From the test results,it can be seen that the sensitivity threshold of both power and ground pins of SOI technology SRAM chip will increase with the increase of temperature,it is more obvious after 100 MHz.3.The electromagnetic sensitivity and sensitivity temperature effect of SRAM chip with SOI and bulk silicon technologies are compared.Firstly,the electromagnetic sensitivity and temperature effects of the two technologies are analyzed based on the structure differences between the bulk silicon technology and the SOI technology,then the sensitivity and temperature effect of bulk silicon SRAM chip are tested and analyzed,finally,the test results of the two technologies are organized and compared.By comparing the electromagnetic sensitivity of each functional pin of two SRAM chips,we can see that SOI technology has certain advantages in sensitivity.Comparing and analyzing the temperature effects of the two technologies sensitivities,it can be found that the sensitivity threshold of the SOI technology SRAM chip power and ground modules increases more than the bulk silicon technology SRAM chip power and ground modules with the temperature increases.