The Effect Of Adjustment Storage Function Layer On The Performance Of Nonvolatile Floating-gate Organic Field-effect Transistor Memory Devices

Organic field effect transistor(OFET) memory devices have attracted extensive attention due to their excellent properties such as nondestructive readout, flexible integration, low temperature processing and low cost. In this paper, the development history, classification and storage mechanism of OFET memory are introduced. We have designed and prepared controlable tunneling barrier of floating gate OFET memory, and explained its mechanism of storage.The Breath-figure method and the spin-coating method were used in combination. Utilizing the water emulsifying properties, so that water droplets evenly distributed in the solution, acting as a porous template. The films made by spin-coating ensures that we can control the thickness and surface roughness. To investigate the impact of the thin/thick nonporous and low/high density porous structure of polymethylmethacrylate(PMMA) film as tunneling layer on the memory properties of the floating-gate OFET memory devices, the typical shift in the transfer curves of the OFET memory devices with thin/thick nonporous and low/high porous structure of PMMA tunneling layer were measured. Compared to the non-porous PMMA tunneling layer memory, the porous structure of PMMA tunneling layer process a positive impact on storage performance of floating gate OFET memory device. In addition, it was found that the memory performance was also increased as the PMMA film pore density increased. The porous structure of PMMA tunneling layer having two properties. Pore structure portion has a lower tunneling barrier, and it is conducive to improve charge capture and release efficiency. Non-porous portion has a high electrical insulating property, so that the memory device exhibit excellent durability and security of data storage.