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Design Of 5G Mobile Phone Power Amplifier Based On GaAS HBT Process

Posted on:2022-05-22Degree:MasterType:Thesis
Country:ChinaCandidate:Z Y XieFull Text:PDF
GTID:2518306554468524Subject:Electronic Science and Technology
Abstract/Summary:PDF Full Text Request
With the opening of the 5G communication frequency band by the Ministry of Industry and Information Technology of my country,5G network transmission has gradually penetrated into all aspects of people's lives.The power amplifier(PA)of the5G communication frequency band has aroused the research interest of more and more researchers.Due to changes in the international situation and growth in domestic demand,the design,production and manufacturing of power amplifiers used in 5G communication frequency bands are particularly important.In this paper,based on the 2?m GaAs HBT process of AWSC,two RF power amplifiers with high output power,high power added efficiency and high gain at3.3GHz?4.2GHz(N77)and 4.4GHz?5GHz(N79)are designed.Its performance is tested and analyzed.The power amplifier adopts three-stage amplification circuit structure and active bias circuit,which effectively improves the linearity of PA output power;the series resistance is added at the base level of RF channel transistor,and the negative feedback structure is adopted,which makes the whole circuit and all levels of circuits in an absolutely stable state;through transformer coupling technology,the matching between PA stages and the return loss S11of the whole PA are optimized;by changing the input voltage,the output power of PA is improved The results show that the gain,output power and power added efficiency of PA are effectively improved,and the overall PA layout area is reduced;the length and width of the overall PA layout are less than 980?m and 970?m respectively,and the total area is less than1000X1000?m2.The simulation results show that the PA with n77 frequency band is relatively wide,so it is more difficult to optimize S11;the PA with N79 frequency has higher working frequency,so it is more difficult to improve the gain,output power and power added efficiency of the circuit.The design is based on the 2?m HBT process of Taiwan Hongjie Company(AWSC),and two RF power amplifiers with high output power,high power added efficiency and high gain at 3.3GHz?4.2GHz(N77)and 4.4GHz?5GHz(N79)are designed.The design adopts a three-stage amplifying circuit structure,using an active bias circuit,which effectively improves the linearity of the PA output power;a series resistance and a negative feedback structure are added to the base level of the RF main circuit transistor,so that the whole and all levels of the circuit are absolutely stable Status;through transformer coupling technology,optimized PA inter-stage matching and overall PA return loss S11;through transformer power synthesis technology,effectively improve the PA gain,output power and power additional efficiency,and reduce the overall layout area of the PA;The length and width of the overall PA layout are respectively less than 980?m and 970?m,and the total area is less than 1000x1000?m2.The simulation results show that it is more difficult to optimize S11due to the relatively wide frequency band of the PA design of N77frequency;the higher frequency band of PA design of N79 frequency makes it more difficult to improve the gain,output power and power added efficiency of the circuit.Based on AWSC's GaAs HBT process,and according to the indicators established by Lansus Technology Co.,Ltd.,PA chips with N77 frequency and N79frequency are designed and taped out.The simulation and test results of the N77frequency PA are basically the same,reaching the company's mass production standard,and put into production and use;the gain of the power amplifier is 36?38d B,the output power 1d B compression point is 37d Bm,and the output power 1d B compression point power The additional efficiency is 54.3%,and the power additional efficiency and adjacent channel power leakage ratio at the output power falling back to 28.5d Bm are 16%and-38d Bc,respectively,and the EVM is less than 1%in the working full frequency band.Except for the slightly lower power-added efficiency,the simulation results of the N79 band PA are basically the same as the N77 band PA simulation results,which have been taped out but no test results.
Keywords/Search Tags:Power amplifier, GaAs HBT process, 5G mobile communication, transformer power synthesis technology
PDF Full Text Request
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