Research And Design Of Power Amplifier Based On GaAs?HBT

Recently,due to the rapid progress of mobile communication,the fifth generation(5G)mobile communication technology has become a hot point in the academic and commercial fields.There are two main driving forces for the development of 5G communication.On the one hand,the fourth-generation(4G)mobile communication system has been fully commercialized,and people have a strong demand for the next generation technology;on the other hand,with the development of social informatization,data requirements are exploding,4G mobile communication is difficult to meet the needs of the future information society,so it is urgent to develop a new generation of 5G communication system.At the same time,the development of 5G communication is also inseparable from the development of radio frequency microwave circuits,which also promotes continuous research and innovation in the field of radio frequency and microwave,and then develops various radio frequency chips that can meet the requirements of 5G communication.In the field of radio frequency chips,power The amplifier is very important,so it is very meaningful to design a power amplifier for 5G communication.Based on the research of power amplifier,this paper designs a MMIC chip for 5G communication base station.This paper establishes the Ga As?HBT power amplifier for 5G communication as the research direction,the main work is as follows:(1)Analyzing the traditional bias circuit of the HBT power amplifier,an new type bias circuit is apply to enhance the linearity of the chip.Because of the diode rectification characteristics of the HBT device and its self-heating effect is particularly serious,the temperature stability and current control accuracy of traditional base are very low.When a large signal is input to the transistor die,its static operating point will change greatly,so the use of an active adaptive linear bias circuit can be very improved The linearity of the circuit improves the overall performance of the circuit.(2)At the same time,the harmonic suppression structure is used to design the last output matching circuit to improve the efficiency of the chip.The high harmonic suppression capability can well improve the efficiency of the power amplifier.Change the voltage waveform and the current wave shape of the transistor collector to reduce the overlap of the voltage waveshape and current waveshape of the transistor collector.So that the voltage and current waveshape of the collector of the transistor are superimposed and reduced,which reduces the power dissipation of the transistor.Improve the efficiency of the power amplifier.(3)Through these two main technologies,a 3.3-3.6 GHz HBT power amplifier has been designed,and The design of ESD protection circuit on MMIC chip is completed.The design and Simulation of peripheral substrate and Evaluation Board(EVB)are also completed.The simulation results of MMIC chip,substrate and EVB board meet the preset index.MMIC chip,substrate and EVB board have been fabricated,and the installation test has been completed.After continuous debugging of the various passive components of the power amplifier on the substrate,to change the various performance parameters of the circuit.According to the final test,The ultimate measure results of the power amplifier show that the output power of 1 d B compression point is 33 d Bm,which provides 34.2 d B small signal gain.When the output power is back to 28 d Bm,the power added efficiency achieves23%,and the IMD3 achieves – 28 d Bc.The power amplifier has good performance.