Research On Flexible Transient Resistive Switching Memory Based On The PVA-GO Composite

In recent years,electronic devices and equipment have become indispensable items in daily consumption and entertainment lives.However,their rapid updating and random discarding not only bring about potential security problems of personal information leakage,but also cause serious electronic waste pollution issues.To solve these problems,there is an urgent need to develop transient electronic technologies based on degradable,renewable,environmentally friendly and low-toxic materials.On the other hand,flexible electronic technology has also received increasing attention from researchers in the past few years.Compared with traditional rigid electronic products,flexible electronic devices are lighter and thinner and can conformally fit with any surface such as human skin,thus showing broad application prospects in the field of wearable and portable electronics.In view of these,the design and preparation of flexible transient electronic devices is in line with the future development trend of electronic technology,and as an indispensable part of electronic equipment,the research and development of flexible transient memory is bound to have important significance.In this thesis,ordinary printing paper is used as the low-cost flexible substrate.Combined with a liquid metal(GaInSn)electrode and a polyvinyl alcohol-graphene oxide(PVA-GO)composite medium,a flexible transient resistive memory device is successfully prepared on paper,whose electrical characteristics,mechanical flexibility and transient property are systematically characterized.The main research progresses achieved is summarized as follows:(1)A GaInSn bottom electrode with the line width of ?400 ?m was prepared on paper by mechanical characterization,which can maintain good electrical conductivity even under a bending radius as low as 1.5 mm.Then,the PVA-GO composite dielectric layer was prepared on it by spin coating,followed by the printing of the GaInSn top electrode through a metal mask to obtain the GaInSn/PVA-GO/GaInSn resistive switching memory on paper.(2)In the flat state,the GaInSn/PVA-GO/GaInSn resistive switching device on paper exhibits a stable bipolar resistive switching behavior,with a write voltage of?1.2 V,an erase voltage of ?–0.5 V,and a high memory window of ?100,an acceptance switching endurance of ?300 times,and a stable data retention time exceeding 7200 s.(3)During the bending process from flat to 1.5 mm radius,the GaInSn/PVA-GO/GaInSn resistive switching device on paper can still maintain stable electrical characteristics,and even at the small bending radius of 1.5 mm,the device can at least withstand 500 consecutive bending fatigue tests.(4)In view of the good water solubility of PVA,the information stored in the GaInSn/PVA-GO/GaInSn resistive switching device on paper can be destroyed quickly and irreversibly within 2 s after the device is exposed to water,thus realizing information security and confidentiality.