Study On The Preparation And Related Characteristics Of Flexible Resistive Device Based On Nb:SrTiO₃ Film

In the information age,nonvolatile memory plays a very important role.And with the development of science and technology,people have an increasingly demand of memory.Flash technology is facing a huge challenge,because of the technology and other issues.The next generation of nonvolatile memory technology is developing rapidly.As one of the most popular candidates,resistive memory has a great application prospect.Resistive memory device's structure is simple,the device process has very large size reduction potential,low power consumption,low cost and fast speed.Therefore,the resistive memory storage technology has a big competitive advantage.This paper combined with the flexible electronics,which is popular recently,researched the flexible resistance uses flexible storage as a starting point.This paper started in the growing film,then the fabrication of devices,at last the resistive properties of the flexible devices.In the flexible device based on Nb:SrTiO₃ single crystal thin films,we tested a on-off ratio nearly 2.5orders of magnitude about the unipolar resistive switching,the lowest resistance was 28ohms,and the highest resistance reached 11000 ohms.Also we found in the state of bending resistance of flexible devices under the values will change the amplitude as high as 5%,and our research have a more adjustable range than the result of 3%which had been reported in the literature^[1].This paper includes the following parts:Firstly,using the pulsed laser deposition on SrTiO₃ substrate optimized Nb:SrTiO₃ growth parameters,high quality Nb:SrTiO₃ thin film was synthesis.Secondly,using wet etching stripped SrTiO₃ substrate successfully,transferring Nb:SrTiO₃thin film material to the film that remains very high crystalline quality,providing the basis for the next step of manufacturing flexible resistive devices.Thirdly,through Van der Waals extension by single crystal successfully prepared on mica111 oriented Nb:SrTiO₃ films,which can be used directly to prepare flexible mica substrate based on variable resistance device.Fourthly,designed the ex perimental platform of change in situ measurement of flexible device resistance,deformation stress and change response performance test device applied by situ,analyzed the conductive mechanism in it.At last,the result shows that the device's resistance for bending curvature will have corresponding changes,different curvature leads to different resistance,bending direction for different devices have different impact resistance.Therefore,the device has the function of storage,the bending direction and curvature detection and so on,making it more extensive application value.The flexible device was prepared by using two kinds of methods in this thesis.Transfer method of the sacrificial layer can realize the transfer of a variety of different materials,the substrate can achieve high quality film replacement.Usually,due to lattice mismatch,it is very difficult to grow high quality single crystal material in the metal,but the transfer film method can be achieved on the single crystal thin film bottom electrode replacement,so this method has greater research value and significance.The mica is dense,corrosion resistance,high-temperature characteristics of 900?C,flexible devices on mica epitaxial thin films prepared in many different bending device as strong device,which have high stability and reliability.