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Research On The Key Technology Of Infrared Radiation Control

Posted on:2022-02-23Degree:MasterType:Thesis
Country:ChinaCandidate:K Q WangFull Text:PDF
GTID:2518306524988139Subject:Master of Engineering
Abstract/Summary:PDF Full Text Request
From the perspective of infrared radiation control technology and application,this article has reviewed the existing infrared radiation control measures and their respective characteristics.Specific to high infrared emissivity characteristics of black silicon and different band emissivity of controllable photonic crystal is applied to the infrared radiation control technology research train of thought.On this basis,black silicon(BSi)and one-dimensional photonic crystal as the research objects,using the research method combining simulation and experiment,focusing on metal etching black silicon experiment preparation,black silicon infrared absorption spectrum broadening,infrared radiation characteristics of test samples and one-dimensional photonic crystal band gap research.Main contents of the study are as follows:(1)According to the experimental principle of metal-assisted etching of black silicon and the specific parameters of the etched black silicon microstructure,a nanopore-like black silicon model was designed.The simulation results show that the absorption rate increases with the increase of porosity in the band range of 0.4?m to1.5?m.When the porous black silicon model is transformed into nanowire model,the light trapping ability of black silicon is improved obviously.Taking the black silicon model with fixed pore distribution as an example,with the increase of etching depth,the absorption rate in the band range from 0.55?m to 1.5?m gradually increases.(2)The experimental preparation of black silicon by two-step metal-assisted etching shows that the surface morphology of black silicon is mainly affected by the deposition of silver nanoparticles and the etching time.With the deposition time changing,the silver particles attached to the surface of silicon substrate are distributed in different shapes,resulting in different microstructures.With the increase of etching time,the etching depth gradually increases,and the porosity of the sample increases.(3)The scattering model of silver nanoparticles in the light field in free space is constructed,and the extinction ability of metal nanoparticles is characterized by calculating the scattering cross-sectional area.The results show that the particle shape,particle size and the polarization direction of the incident light field all affect the scattering results.On this basis,the absorption model of composite black silicon attached to silver nanoparticles was constructed to analyze the enhancement of the infrared absorption capacity of black silicon by surface plasmon resonance effect,and the application potential of this composite absorption material in infrared stealth and detection field was preliminarily explored.(4)From the point of view of thin film transport theory,through transfer matrix method to calculate one-dimensional photonic crystal band gap,the results show that the photonic band gap materials mainly by dielectric constant repetition and cycle number two factors influence,on this basis to build a Ge-Zn S film system structure of one-dimensional photonic crystals,administered after the introduction of material dispersion and simulation and parameter optimization,in 3?m-5?m and 8?m-14?m two infrared reflectivity of 100% within the atmospheric transmission Windows.And outside the window in the middle of the band,the average transmission rate was 50%.
Keywords/Search Tags:black silicon, metal-assisted etching, surface plasmons, one-dimensional photonic crystals
PDF Full Text Request
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