Research Of A Novel Silicon Integrated Ideal Switch Structure

Integrated Circuit refers to the production of several electronic components in a circuit on a small carrier through some process steps,and interconnect them according to the circuit design,and then package them to become a microelectronics that can achieve certain functions.Application-Specific Integrated Circuit is an integrated circuit designed and manufactured in response to user-specified requirements.FPGA is a typical application-specific integrated circuit.In recent years,FPGA chips have accounted for an increasing proportion of the ASIC market and are still developing steadily.Although the domestic FPGA industry is booming,it has a huge gap with foreign countries in terms of technology and market shares.It is necessary for our country to hold our own technology in the field of FPGA,which is important for integrated circuit technology research and promotion of national economic development.On the basis of studing the development status and working principle of FPGA,and the low power consumption technology of large-scale FPGA,this paper proposes an ideal switch structure,combining with the development direction of 3D multi-gate structure of MOSFET devices.First,this paper analyzed the principle of design and the advantages to the new stucture theoretically,and then,it is simulated with TCAD.TCAD uses the established mathematical formulas of the semiconductor physical model,combined with mathematical analysis methods,to simulate the actual working process of the semiconductor device through a computer,then understands its real working performance through the simulation results.Sentarus software provides a large number of physical models and mathematical methods,which can perform two-dimensional and three-dimensional device simulations.This paper uses the software to perform three-dimensional modeling and simulation of the structure proposed to explore the performance of the device;and explore the influence of the different structural parameters on the performance of the device through the control variable method,so as to find an optimization method to optimize the structure to obtain an ideal switch structure that can be integrated on-chip for power gating technology.It is characterized by small specific on-resistance,a breakdown voltage higher than the IC operating voltage and a large switching ratio.The simulation results shows that the optimized transistor can work normally.It can be used as a sleep transistor in a 1.2V power supply circuit module.Theoretically,to provide 1m?on-resistance requires 6246?m~2of the chip area.The breakdown voltage of the transistor switch is 3.74V.The switching ratio reaches 10~6.