Research On Key Technologies Of 220GHz Transceiver Chip Based On CMOS Technology

In recent years,millimeter wave/terahertz chip design has made great progress due to advancements in semiconductor technologies.Recently,the application of CMOS technology with small-size,low-power consumption and low-cost in millimeter wave /terahertz monolithic chip has attracted wide attention.In the relatively small attenuation of the "atmospheric window" frequency 220 GHz,this thesis focuses on some key circuits in the terahertz transceiver front-end system using silicon-based CMOS technology,and the application of packaging technology has been studied at the same time.In this thesis,SMIC 55 nm process is applied in terahertz low frequency band for the first time,and several kinds of chips are designed to verify its feasibilityIn the transmitting front-end system,the frequency multiplier and switch are mainly studied.We design two kinds of frequency doublers for the frequency range of 102.5-112.5 GHz and one switch for the frequency range of 205-225 GHz.In addition,a millimeter-wave transmitter front-end chip cascaded of the frequency doubler and the switch is simulated and verified based on the 55 nm CMOS process.The simulation results show that the maximum frequency doubling loss is about 21 d B when the switch is on,and the return loss of is better than 20 d B.When the switch is closed,the isolation is great than 40.3 d B between 112.5 GHz and 225 GHz.The on-chip measured results show that the insertion loss of the switch chip is 4.9 d B-d B from 170 to 190 GHz,and the isolation is better than 22 d B when it is turned off.However it has about 30 GHz frequency offset when compared with the simulated results.In the receiving front-end system,mixer and amplifier are mainly studied.Two down conversion mixers for the frequency range of 205-225 GHz and a local oscillator amplifier is designed for the frequency range of 102.5-112.5 GHz.In addition,a terahertz receiving front-end chip cascaded of a mixer and a 3-18 GHz IF amplifier is simulated and verified based on the 55 nm CMOS process.The simulation results show that the frequency conversion loss is better than-5.32 d B from 208 GHz to 223 GHz,the frequency conversion gain is about 15 d B at 4 GHz,and the return loss is better than 15 d B.Finally,two mixer chips and receiver front-end chips are packaged for measuring.The measured results of the receiver front-end chips show that the conversion loss is better than 40 d B from 208 GHz to 223 GHz.At the same time,a 220 GHz Ga N HEMT power amplifier chip is packaged.The saturated output power of the power amplifier module reaches 17 d Bm at 220 GHz,which can not be seen in other public report in China.