Research And Design Of E-band Millimeter-wave Mixer Based On CMOS Process

With the continuous innovation and development of wireless communication technology,modern wireless communication has been applied in all walks of life,especially in the field of intelligent vehicle driverless technology.Automotive radar is the key to ensure the stability and safety of driverless driving,and plays an important role in preventing traffic accidents.The development of complementary metal oxide semiconductor(CMOS)technology has greatly increased the characteristic frequency(f _T)of transistors,reducing the dependence on the III-V compound semiconductor technology,which can meet the E-band(71?86GHz)applications.Therefore,people turn their attention to the millimeter-wave frequency band with higher frequency.Although the market forecast is very optimistic,the high integration,high performance,low power consumption and low cost technology of millimeter-wave radar remains a challenge.Therefore,it is of great practical significance to design a millimeter-wave circuit with the advantages of low cost,high integration and compatibility with digital circuits.The millimeter-wave radar transceiver mainly realizes the function of receiving and transmitting signals between different frequencies.The main performance is that the receiving RF signal is demodulated into the intermediate frequency signal,and the transmitting baseband signal is modulated into the RF signal.Based on the standard 65 nm CMOS process,this paper designs a mixer module applied in the 77 GHz millimeter-wave automotive radar transceiver.Its work contents are as follows:First,this paper introduces the mixer history research progress both at home and abroad,compared the performance and characteristics of which in the traditional mixer Gilbert structure,on the basic principle of mixer has made the detailed introduction and performance parameters,put forward the mixer gain,noise and linearity performance indexes such as the tradeoff between problem,the equilibrium relation between the circuit performance is analyzed.Then,the process characteristics of passive balun are introduced,the performance parameters and design methods of balun on chip are analyzed,the parameters are optimized by changing the geometric structure,the necessity of using balun in mixer.The matching rules and priorities that need to be paid attention to in port impedance matching are expounded.The theoretical knowledge and relationship between mixer and passive balun are systematically integrated.Finally,an octagonal on-chip balun with stacked structure is designed through simulation and comparison,which has good performance indexes such as unbalance degree and insertion loss.Finally,based on the theoretical basis and parameter analysis above,the Gilbert structure is improved and designed,such as superposition transistor,parallel peak inductor and load current source,etc.,an active dual balance down conversion mixer with a center frequency of 77 GHz is designed.When the intermediate frequency(IF)is fixed at 100 MHz,the maximum conversion gain(CG)is 12.97 dB,the minimum noise figure(NF)is 12.56 dB,and the input compression point(IP_1dB)is-15.75 dBm at the local oscillator signal driving power of 1 dBm.The input third-order intercept point(IIP3)is-8.15 dBm,the Lo-to-RF isolation from the local oscillator(LO)port to the radio frequency(RF)port is 49 dB,and the power consumption is 6.95 mW at 1.2V power supply voltage.The design module is suitable for 77 GHz millimeter wave receiver automotive radar.