Reliability Evaluation Of Nanoscale Integrated Circuits In Strong Electromagnetic Environment

With the rapid development of integrated circuit,the size is smaller and smaller,and the technology is more and more advanced.As the core of electronic system,the application of integrated circuit is more and more extensive.However,with the shortening of gate length and the decrease of breakdown voltage,the external electromagnetic environment becomes more complex.Compared with the original large-scale devices,the nano integrated circuit is more likely to absorb the external electromagnetic pulse interference,resulting in the functional error of the internal electronic system,and even the damage of the components.Therefore,it is of great significance to study the sensitive region and damage mechanism of nano integrated circuit in the environment of strong electromagnetic pulse.In this paper,the research background and significance of the strong electromagnetic pulse,as well as the current situation at home and abroad of the strong electromagnetic pulse research,and then the physical mechanism of the device failure caused by the strong electromagnetic pulse is analyzed theoretically.Then,the device model is built in Sentaurus TCAD,and the two-dimensional MOSFET device model is simulated to inject strong electromagnetic pulse,including two kinds of common strong electromagnetic pulse,EMP and HPM,and the comparison analysis is made.By observing the distribution of electric field current and temperature in the device,the sensitive position in the device under the strong electromagnetic pulse environment is found and the internal mechanism is analyzed in depth.The simulation results show that the peak value of the electric field intensity is near the PN junction of the drain-sub of MOS tube when the drain is injected into the EMP signal,and the current density in the channel is relatively dense.To sum up,the temperature of the PN junction of the drain-sub increases rapidly due to the action of large electric field and strong current,which eventually leads to burnout.In the HPM environment,with the change of signal period,the peak value of electric field intensity will appear in the drain-sub PN junction and the source-sub PN junction in turn,and the peak value of current density will also focus on the channel,but the peak value of electric field intensity and current density in the positive half cycle is significantly greater than that in the negative half cycle.Therefore,the burning of the device is because,with the periodic change of the signal,the heat is generated periodically,and the heat generation is significantly greater than the heat dissipation,resulting in the temperature rise,while the heat generated in the positive half cycle is significantly greater than the negative half cycle,which finally causes the burning at the drain-sub PN junction.After having the theoretical basis,this paper evaluates the reliability of the nano integrated circuit in the strong electromagnetic environment.In this paper,the EMP injection test and HPM irradiation test of a 90 nm MCU of ST are carried out.The results of injection test show that when the voltage increases gradually,soft failure occurs first,and then when the voltage reaches the damage threshold,the device will suffer irrecoverable damage.At the same time,in most cases,the damage threshold of positive voltage injection is higher than that of negative voltage injection.Due to the limitation of the equipment,the field strength of the irradiation test can only reach more than 100 V / m,and the integrated circuit does not fail during the test.In this paper,the sensitive region and failure mechanism of MOS devices under the action of strong electromagnetic pulse are studied,which provides theoretical and experimental reference for further research including protection and reinforcement technology.At the same time,aiming at the system level chip to build the test circuit and test environment innovatively,the reliability test of the nano integrated circuit in the strong electromagnetic environment is carried out and some conclusions are drawn,which provides a reference value for the further test of strong electromagnetic pulse injection and irradiation.