Interference Effect Of HPM On A Low Noise Amplifier With A PIN Limiter

With the advancement of semiconductor technology,the feature size of the device continues to decrease and the working frequency continues to increase,and the electromagnetic environment is becoming increasingly complex,which puts higher requirements on the anti-interference ability of electronic systems and internal devices.As an important form of electromagnetic pulse,high power microwave has a narrow frequency band and high peak po wer,which could be coupled into the system through antennas and holes to cause damage to sensitive devices.Therefore,it is of great significance to study the high power microwave effect of RF receiving systems.This paper studies the high power microwave damage effect inside PIN diode,designs the RF front-end protection circuit and simulates its protection performance,and designs a low-noise amplifier and simulates the transient characteristics of high power microwave.The main research content and results are as follows:(1)A two-dimensional electrothermal model of Si-based PIN diodes is established by using Sentaurus-TCAD.The damage process of the PIN limiter is transiently simulated when high power microwave is applied,and the electrical field and current density of the device are analyzed;Then the influence of the frequency and amplitude of high po wer microwave on the PIN limiter is discussed,and the law between microwave parameters and burn-in time is summarized;Finally,the structure parameters of the limiter on HPM damage are discussed.The results show that in the case of little impact on the performance of the limiter,reducing the substrate doping concentration and the parallel inductance value can effectively extend the burn-out time of the device.(2)The specifications and design methods of the PIN limiter are introduced;A time domain equivalent model of the PIN diode is established,a passive three-level counter PIN limiter is designed by ADS according to the specifications,and then the PIN limiter is verified The protection performance.The results show that the protection module attenuates the electromagnetic pulse to a lower level through three-stage discharge and successively decreases the voltage,and has good electromagnetic pulse protection performance;The transient response of limiter output under different microwave parameters of electromagnetic pulse is simulated,and the interaction between pulse parameters and output response time,spike leakage and flat-top leakage is summarized;Then a parallel-coupled microstrip line band-pass filter is designed,and the designed integrated protection module is simulated,the results show that the electromagnetic pulse protection module has a good protection effect on the HPM in the operating band and out of band.(3)The performance indicators and design steps of the low-noise amplifier are discussed,a low-noise amplifier is designed according to the requirements of performance indicators,and the circuit performance and nonlinear effects are simulated by using ADS;The recovery time and port response voltage transient characteristics of HPM injection for low noise amplifiers are simulated,and the law between recovery time and HPM parameters is summarized.Combined with injection experiments,it was found that the gate of the first-stage HEMT de vice of LNA(Low Noise Amplifier)is easily damaged by the impact of HPM,which led to the failure of the LNA circuit.