Study On Irradiation Effect And Reliability Of Nano-MOS Devices

With the improvement of technology level,MOS devices are widely used in spacecraft electronic equipment systems due to their high performance,low power consumption and high integration.However,the space environment in which spacecraft electronic equipment working contains a large number of radiation particles and rays.These radiation particles and rays can interact with components on electronic equipment,cause degradation of device performance,and may even cause serious spacecraft failure.At the same time,with the gradual reduction of the device size,its own reliability problems are becoming increasingly serious,and the BTI effect is one of the key issues.Compared with large-size devices,nanodevices have new manifestations of their radiation effect and reliability issues,and radiation particles and rays in the space environment may also affect the reliability of nano-devices,bring severe challenges to device performance evaluation and life prediction.Therefore,in order to ensure the stable operation of the MOS devices in the space environment,the reliability problems under the radiation environment need to be studied urgently.The research on the reliability of nano-devices in the radiation environment is still in its infancy,and the research on related topics is particularly important.This article uses 28 nm process MOS device as a sample to study the radiation effect and BTI effect of the devices.First,the Silvaco software is used to simulate the MOS device and analyze the effects of different doses on the device characteristics and parameters.Subsequently,the radiation samples were tested experimentally.The effect of different factors on the radiation effect were studied from four aspects: different channel width,different channel length,different radiation doses,and different radiation particles.The degree of degradation on the parameters has a positive correlation with the radiation dose and the LTE value of the radiation source,and a negative correlation with the channel length and channel width.Secondly,the PBTI effect experimental study of MOS devices is carried out.The irradiated samples are subjected to PBTI experimental tests to study the changes in device characteristics and parameters under PBTI stress and the effect of device size on PBTI effect.The degree of degradation cause by PBTI effect has a positive correlation with channel width,and a negative correlation with the channel length.Finally,the effect of irradiation effect on PBTI effect was studied.The experimental results of PBTI were compared between the un-irradiated samples and the irradiated samples.It was found that the radiation effect has a competitive relationship with the PBTI effect.The effect of different factors on the degree of competition between the radiation effect and the PBTI effect are studied from three aspects: different channel length,different radiation doses and different radiation particles.The results show that the degree of competition between the radiation effect and the PBTI effect has a positive correlation with the radiation doses and the LTE value of the radiation source,a negative correlation with the channel length.It was found that the degree of competition between the radiation effect and the PBTI effect has a positive correlation with the number of holes and trap charges introduced by the former.In summary,this article conducts research on device radiation effect and BTI effect,reveals the effect of different factors on device radiation effects,and combines PBTI effect to discuss the dual mechanism of radiation effect and PBTI effect.The generation mechanism of the competition relationship and the impact of different factors on their competition relationship.The research direction is innovative,which can provide theoretical guidance for the reliability of nano-devices in the radiation environment.