Research On Radiation Damage And Annealing Effect Of MOS Devices

The threshold voltage is one of the most crucial parameter of MOS device. Based on the proton and the electron irradiation, the degradation of MOS devices (CC4013 and CC4007) has been researched. More over, the annealing effect under different annealing time and temperature has been studied after irradiation.The results show that, with the increase of irradiation fluence, the threshold voltage of PMOS decrease. While for NMOS, the voltage decrease at low irradiation fluence, increase when irradiation fluence reaches to a certain degree. The damage caused by different resources varies. In the given irradiation fluence, 3MeV proton cause the biggest damage, then is 110keV,1MeV electron and 170keV proton. In the same irradiation energy and source, the flux has little influence on the curve of threshold voltage shift.The annealing results show that, the annealing effects of threshold voltage differ under different annealing temperature. The higher of the temperature, the greater of the annealing rate and degree for MOS device. The recovery degree of MOS devices irradiated by different particles varies. At room temperature, the annealing recover degree of MOS device irradiated by 110keV electron is greeter. While annealing at 100℃, the annealing effect of MOS device irradiated by 3MeV proton is obvious. When annealing temperature is 150℃,the annealing degree of MOS device irradiated by 1MeV electron is greeter. However, at 200℃and 250℃, the curve of threshold voltage annealing is almost coincident.