| Among III-N semiconductors InN has immense potential to become a promising tera-Hz device candidate. Low electron effective mass and high saturation velocity make it an attractive material for nanoscale transistor channels. But there are certain challenges in realizing devices with InN. This work addresses some of those challenges and propose solutions to circumvent those through quantitative calculations, TCAD simulations and physical analysis. Novel device structures like tri-gate and interesting solid state phenomena like polarization fields in III-N heterostructures, interband tunneling, transport properties, carrier multiplication are enlightened in significant details from a theoretical perspective to model InN devices keeping focus on high frequency performance. Small signal simulations of modelled devices are done to extract RF parameters. Promising high speed performance with capability of operating in tera-Hz regime is observed from simulation results. Added to that, good breakdown voltage is obtained which proves the prospect of InN devices in delivering tera-Hz frequency with an adequate signal strength. |
