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Heterogeneous Integration of Mid-Infrared Lasers on Silico

Posted on:2019-11-25Degree:Ph.DType:Thesis
University:University of California, Santa BarbaraCandidate:Spott, Alexander WeberFull Text:PDF
GTID:2478390017988619Subject:Electrical engineering
Abstract/Summary:
The mid-infrared spectral region, ~2--20 microm, is of interest for numerous sensing, medical, industrial, and military applications. The rovibrational transition energies of many important molecules fall within this region, making mid-infrared light particularly suitable for gas-sensing or material identification. Mid-infrared chemical bond spectroscopy of the earth's atmosphere and planetary bodies helps improve our understanding of greenhouse gases, pollutants, and biochemical compositions. Defense technologies, including scene illumination and infrared counter-measures, benefit from high-power mid-infrared light sources. The atmospheric transmission windows in the ~3--5 microm and ~8--13 microm ranges can extend infrared technologies to longer distances for remote explosive detection, thermal imaging, and free-space communications.;Silicon photonic integration promises to address many of these applications on an integrated, low-cost platform. For example, a diverse portfolio of photonic sensors can potentially be integrated on a single silicon chip. Resonators, multiplexers, modulators, phase shifters, frequency combs, detectors, and various other optical devices operating at wavelengths throughout the mid-infrared have already been demonstrated on silicon photonic waveguiding platforms. Heterogeneous integration, where III-V material layers are transferred above silicon waveguides by wafer- or die-bonding, has previously been applied to construct near-infrared lasers on silicon, however, prior to 2014 no mid-infrared laser source integrated on silicon had been reported.;This thesis presents the heterogeneous silicon/III-V integration of mid-infrared InP-based type-I diode lasers for lambda ≈ 2.0 microm, InP-based quantum cascade lasers (QCLs) for lambda ≈ 4.8 microm, and GaSb-based interband cascade lasers (ICLs) for lambda ≈ 3.7 microm. These Fabry-Perot and distributed feedback (DFB) lasers function above room temperature, are integrated on silicon substrates, and couple mid-infrared light into silicon waveguides. The design considerations, fabrication processes, and performance of each set of lasers are discussed in detail.
Keywords/Search Tags:Mid-infrared, Lasers, Silicon, Microm, Integration, Heterogeneous
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