| The silicon vacancy, carbon antisite-vacancy pair, and the divacancy in 4H Silicon Carbide (SiC) are all single photon emitters. All three of these defects have previously been excited optically. This thesis will describe an attempt to electrically excite these defects. A 4H SiC pn junction was irradiated with electrons and then a mesa structure was fabricated. The electroluminescence spectrum (EL) of this junction was examined under forward bias, and reverse breakdown conditions. The EL was also examined after annealing the junctions at 200°C, 500°C, and 1000°C. Based on the EL spectrum and annealing behavior there is strong evidence to support the successful excitation of silicon vacancies under forward bias conditions. |
