Investigation Of The Oxygen Relative Defects In Electron Irradiated Czochralski Silicon

The interstitial (I) and vacancy (V) were generated in electron irradiation silicon via collide between electron and silicon atoms, and interact of basic defects and silicon atoms can produce sub-defects. These defects were unstable, and disappeared completely after 200℃to 500℃. The defects were effective nucleus centre of oxygen concentration, and could accelerate oxygen precipitation through annealed at high temperature. In this paper, the influences of electron irradiation on the irradiation defects in CZ-Si were investigated with Fourier Transform Infrared Absorption Spectrometer (FTIR) and Optical Microscope.Two infrared absorption bands at 830cm-1 and 889cm-1 were observed in the silicon crystal by electron irradiation. It's consistent that multiple oxygen-defects compound center evolved by VO and model of oxygen-defects compound put forward by Stein. The thermal behavior of samples was different due to interstitial oxygen contention.The stability of the VO2 was investigated as the VO2 appeared after electron irradiation. The stability of the VO2 were well annealed at 450℃, while the covalent bond in VO2 were active at 500℃, consequently formed VO3 via seize interstitial oxygen atoms.Oxygen precipitation in electron irradiation Czochralski silicon were accelerated when annealed at 1100℃or with RTP in nitrogen ambient. It is different that defects in cleavage plane of the samples in argon and nitrogen ambient. The effect of rapid thermal process (RTP) makes the conditions of defects complex at nitrogen ambient.