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Design of MOSFET Ultra-Wideband low noise amplifiers

Posted on:2009-02-04Degree:M.SType:Thesis
University:Florida Atlantic UniversityCandidate:Camacho, EstebanFull Text:PDF
GTID:2448390005454658Subject:Engineering
Abstract/Summary:
Ultra-Wideband (UWB) systems are a new wireless technology capable of transmitting data over a wide spectrum of frequency bands with very low power and high data rates. This technology has the potential to replace almost every cable at home or in an office with a wireless connection. In a UWB receiver, a radio frequency (RF) low noise amplifier (LNA) is one of the most important components. This thesis discusses the entire process involving the design of UWB low noise amplifiers including a detailed stage by stage analysis of a computer aided design (CAD) of a MOSFET UWB LNA. Simulation tools and concepts from Level 1 equations are used in order to design a circuit with a realistic MOS model such as the BSIM3 used in this work. The LNA shows improved power consumption over the designs it is based on while still producing comparable results.
Keywords/Search Tags:Low noise, UWB, LNA
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