| A dynamic current (iDD) sensor supply is presented. The sensor uses the pad inherent resistance (the available between the positive power supply, Vdd, and the mission circuit), which allows current measurements without placing a device between the power supply and the circuit under test (CUT). Characterization of the pad frame, potential integrated measuring solutions by a current to voltage conversion and a preview of its use as a flag for faulty circuits are presented. The proposed circuit is a Built-In Self Test (BIST) capable of using already available integrated structures for measuring current waveforms. Vdd ring characterization yields an equivalent resistance of 225.948 mO. Some of the challenges involved in the design of such a sensor are: high-gain, high-bandwidth, low-power, low-noise, linearity and high slew rate. Circuit design and simulations were implemented using Cadence 0.6um CMOS technology and AMI 0.6um fabrication process. |
